相关论文: Deep-Cryogenic Modeling of 22-nm FDSOI MOSFETs bas…

This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The…

This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special…

On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…

Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential…

A deep-learning (DL) based methodology for automated extraction of BSIM-CMG compact model parameters from experimental gate capacitance vs gate voltage (Cgg-Vg) and drain current vs gate voltage (Id-Vg) measurements is proposed in this…

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…

In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the…

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…

Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and…

We demonstrate a dynamic scanning capacitance microscope (DSCM) that operates at large bandwidths, cryogenic temperatures and high magnetic fields. The setup is based on a non-contact atomic force microscope (AFM) with a quartz tuning fork…

Programmable self-assembly has recently enabled the creation of complex structures through precise control of the interparticle interactions and the particle geometries. Targeting ever more structurally complex, dynamic, and functional…

This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses.…

For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work, an…

Cryo Focused Ion-Beam Scanning Electron Microscopy (cryo FIB-SEM) enables three-dimensional and nanoscale imaging of biological specimens via a slice and view mechanism. The FIB-SEM experiments are, however, limited by a slow (typically,…

Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…

The increasing use of two-dimensional (2D) materials in nanoelectronics demands robust metrology techniques for electrical characterization, especially for large-scale production. While atomic force microscopy (AFM) techniques like…

In this paper, through careful calibration, we demonstrate the possibility of using a single set of models and parameters to model the ON current and Sub-threshold Slope (SS) of an nMOSFET at 300K and 5K using Technology Computer-Aided…

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the…

We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and…