相关论文: Strain engineering of doped hydrogen passivated si…

We study the changes in the Fermi surface with electron doping in the LaFeAsO$_{1-x}$F$_x$ superconductors with density-functional supercell calculations using the linearized augmented planewave (LAPW) method. The supercell calculations…

This study is carried out using first principles density functional theory calculations within gpaw code. Atomic size effect is analyzed and investigated by doping either Li, Cs or both on Barium doped BiFeO$_3$ (BFO) which belongs to…

We report optical reflectivity study on Nd$_{2-x}$Ce$_x$CuO$_4$ over a broad doping range 0$\leq x\leq$0.20. The study reveals a systematic shift of chemical potential with doping. A pronounced peak structure specific to the electron-doped…

We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a…

We report the Hall resistivity, $\rho_{xy}$ of polycrystalline SmFeAsO$_{1-x}$F$_{x}$ for four different fluorine concentrations from the onset of superconductivity through the collapse of the structural phase transition. For the two more…

In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…

The paper compares the K-dependence of the superconducting gap in different doping ranges. The fine behavior of the leading edge gap indicates that the pairing susceptibility is peaked at special regions on the Fermi surface. These hot…

Doping can profoundly affect the electronic- and optical-structure of semiconductors. Here we address the effect of surplus charges on non-radiative (NR) exciton and trion decay in doped semiconducting single-wall carbon nanotubes. The…

The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly…

Pressure dependence of electronic structures and thermoelectric properties of $\mathrm{Mg_2Sn}$ are investigated by using a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC). The corresponding value of…

In this work, we calculate material gain for long wavelength III-nitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is…

Material strain has recently received growing attention as a complementary resource to control the energy levels of quantum emitters embedded inside a solid-state environment. Some rare-earth ion dopants provide an optical transition which…

Employing the four-band tight-binding model we study theoretically the doping dependence of the spin response in the normal state of novel Fe-based pnictide superconductors. We show that the commensurate spin density wave (SDW) transition…

The n-type tensile-strained Ge can be used as high-efficient light-emitting materials. To reveal the influence of n-type doping on the electronic structure of Ge, we have computed the electronic structure of P, As and Sb doped Ge using…

Superconductivity is caused by the interaction between electrons by the exchange of collective bosonic excitations, however, this bosonic glue forming electron pairs is manifested itself by the coupling strength of the electrons to…

We report a theoretical investigation of effects of Mn and Co substitution in the transition metal sites of the kagome-lattice ferromagnet, Fe3Sn2. Herein, hole- and electron-doping effects of Fe3Sn2 have been studied by density-functional…

Band structures of C60-polymers are studied changing conjugation conditions and the electron number. We use a Su-Schrieffer-Heeger type semiempirical model. In the neutral C60-polymer, electronic structures change among direct-gap insulator…

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

By measuring the field and temperature dependence of magnetization on systematically doped $La_{2-x}Sr_xCuO_4$ thin films, the critical current density $j_c(0)$ and the collective pinning energy $U_p(0)$ are determined in single vortex…