相关论文: Growth of hexagonal BN crystals by traveling-solve…

Transparent and colorless hexagonal boron nitride (hBN) single crystals were grown from the Mg-B-N system using high-pressure high-temperature cubic anvil technique. By varying the synthesis conditions we could determine the sequence of…

Hexagonal boron nitride (hBN) presents valuable intrinsic properties and attracts considerable attention for the development of novel two-dimensional (2D) materials-based technologies. Even though huge efforts have been made to improve the…

We have attempted the crystal growth by the traveling-solvent floating-zone (TSFZ) method of La_{2-x}Ba_xCuO_4 with x~1/8, where the superconductivity is strongly suppressed. Under flowing O_2-gas of a high pressure (4 bars), we have…

We report the growth of mm-sized Pmnb-Li2FeSiO4 single crystals by means of the optical floating-zone method at high argon pressure and describe the conditions required for a stable growth process. The crystal structure is determined and…

We report the growth of high quality rhombohedral boron nitride (rBN) crystals by the iron flux method at atmospheric pressure. In contrast to the lamellar structure of standard hexagonal boron nitride (hBN) covering the metal ingot, the…

The scalable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) is of great interest for its numerous applications in novel electronic devices. Highly-crystalline h-BN films, with single-crystal sizes up to hundreds of…

The floating zone technique is a well-established single crystal growth method in materials research, able to produce volumetrically large specimens with extremely high purities. However, traditional furnace designs have relied on heating…

Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching…

Mm-sized LiMn$_{1-x}$Fe$_x$PO$_4$ single crystals with $0\leq x \leq 1$ were grown by means of the traveling floating-zone technique at elevated Argon pressure of 30~bar. For the various doping levels, the growth process was optimized with…

Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…

In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a…

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in…

High-quality Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+\delta}$(0$<$x$\leq$0.5) single crystals have been grown successfully using the travelling-solvent floating-zone(TSFZ) technique. The samples with $x >$ 0.05 are in the underdoped level. The…

We present a route to grow single crystals of Ba$_{0.9}$Sr$_{0.1}$CuSi$_{2}$O$_{6}$ suitable for inelastic neutron studies via the floating zone technique. Neutron single crystal diffraction was utilized to check their bulk quality and…

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam…

Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by x-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 C. All through the…

We report the optimized conditions for growing the high quality single crystals of candidate quantum spin-ice Pr2Hf2O7 using the optical floating-zone method. Large single crystals of Pr2Hf2O7 have been grown under different growth…

Atom-layered hexagonal boron nitride (hBN), with excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator to open up the great possibilities for exciting potential applications in electronics,…

We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy…

Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees…