相关论文: Scaling Effects of Transistor Leakage Current and …
Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication…
Resistive Random Access Memory (RRAM) crossbar arrays are an attractive memory structure for emerging nonvolatile memory due to their high density and excellent scalability. Their ability to perform logic operations using RRAM devices makes…
Memristor crossbar arrays have emerged as a key component for next-generation non-volatile memories, artificial neural networks, and analog in-memory computing (IMC) systems. By minimizing data transfer between the processor and memory,…
Multi-core neuromorphic systems typically use on-chip routers to transmit spikes among cores. These routers require significant memory resources and consume a large part of the overall system's energy budget. A promising alternative…
Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…
Passive crossbar arrays based upon memristive devices, at crosspoints, hold great promise for the future high-density and non-volatile memories. The most significant challenge facing memristive device based crossbars today is the problem of…
Crossbar resistive memory with 1 Selector 1 Resistor (1S1R) structure is attractive for low-cost and high-density nonvolatile memory applications. As technology scales down to the single-nm regime, the increasing resistivity of…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…
The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used.…
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and…
The higher speed, scalability and parallelism offered by ReRAM crossbar arrays foster development of ReRAM-based next generation AI accelerators. At the same time, sensitivity of ReRAM to temperature variations decreases R_on/Roff ratio and…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…
Crossbar resistive memory with the 1 Selector 1 Resistor (1S1R) structure is attractive for nonvolatile, high-density, and low-latency storage-class memory applications. As technology scales down to the single-nm regime, the increasing…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future…
Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the intricate interplay between the row hammer effect and the…
Spin-Torque-Transfer RAM (STTRAM) is a promising technology however process variation poses serious challenge to sensing. To eliminate bit-to-bit process variation we propose a reference-less, destructive slope detection technique which…
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…
Security and energy-efficiency are critical for computing applications in general and for edge applications in particular. Digital in-Memory Computing (IMC) in SRAM cells have widely been studied to accelerate inference tasks to maximize…