相关论文: Strained topological insulator spin-orbit torque r…
We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant.…
We propose Sectored DRAM, a new, low-overhead DRAM substrate that reduces wasted energy by enabling fine-grained DRAM data transfers and DRAM row activation. Sectored DRAM leverages two key ideas to enable fine-grained data transfers and…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
We investigate theoretically the spin torque and magnetization dynamic in a thin ferromagnetic (FM) layer with spatially varying magnetization. The FM layer is deposited on the surface of a topological insulator (TI). In the limit of the…
Topological insulators have attracted great interest as generators of spin-orbit torques (SOTs) in spintronic devices. Bi\textsubscript{1-x}Sb\textsubscript{x} is a prominent topological insulator that has a high charge-to-spin conversion…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
The emerging field of topology has brought device effects to a new level. Higher-order topological insulators (HOTIs) go beyond traditional descriptions of bulk-edge correspondence, broadening the understanding of topologically insulating…
SoCs are now designed with their own AI accelerator segment to accommodate the ever-increasing demand of Deep Learning (DL) applications. With powerful MAC engines for matrix multiplications, these accelerators show high computing…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
In this paper, we propose a Spin-Torque (ST) based sensing scheme that can enable energy efficient multi-bit long distance interconnect architectures. Current-mode interconnects have recently been proposed to overcome the performance…
We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
In this work, we propose a novel differential photonic static random access memory (pSRAM) bitcell design using fabrication-friendly photonic components. The proposed pSRAM overcomes the key limitations of traditional electrical SRAMs,…
Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…
A new research topic in spintronics relating to the operation principles of brain-inspired computing is input-driven magnetization dynamics in nanomagnet. In this paper, the magnetization dynamics in a vortex spin-torque oscillator (STO)…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa…
Correlated physics in nearly flat topological bands is a central theme in the study of moir\'e materials. While ground states at integer fillings are typically identified as quantum Hall ferromagnets within a Hartree-Fock framework, we…
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…