相关论文: Anomalous valley Hall effect in electric-potential…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model…
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Currently, researchers are focus on searching three-dimensional…
Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…
Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…
Achieving external control over the anomalous valley Hall (AVH) effect is essential for advancing valleytronic applications. However, many of the existing approaches suffer from limitations such as irreversibility or volatility. In this…
The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and…
Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valley-polarized quantum anomalous Hall insulator (VQAHI). Here,…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic…
Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm…
Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of…
The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of the valley degree of freedom in materials. A general strategy for its realization and manipulation is crucial for valleytronics. Here, by…
An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…