相关论文: Anomalous valley Hall effect in electric-potential…
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA)…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization mainly focuses on two major types of systems. One type…
The search for two-dimensional materials with exotic valley-dependent properties has attracted rapid attention as they are fundamentally intriguing and practically appealing for nanoscale device applications. Here, using first-principles…
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…
The ability to control and manipulate time-reversal ($T$) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…
Using the density functional theory calculations, we predict that several monolayer chromium-based materials exhibit a triple-Q tetrahedral magnetic insulating ground state. By studying the effect of biaxial strain on monolayer…
Altermagnets (AMs) are a recently identified class of unconventional collinear compensated antiferromagnets that exhibit momentum-dependent spin splitting despite having zero net magnetization. This unconventional magnetic order gives rise…
The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
In the anomalous Hall effect (AHE), the magnetization, electric field and the Hall current are presumed to be mutually vertical to each other. In this work, we propose an unconventional AHE where the magnetization, the electric field and…
Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor…
Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to…
Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that…
The antiferromagnetic (AFM) materials are robust to external magnetic perturbation due to missing any net magnetic moment. In general, the spin splitting in the band structures disappears in these antiferromagnets. However, the…
The interplay between magnetism and topological electronic structure offers a large freedom to design strong anomalous Hall effect (AHE) materials. A nodal line from band inversion is a typical band structure to generate strong AHE.…
Antiferromagnetic (AFM) spintronics exploits the N\'eel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidamping spin-orbit torques (SOT) can be used to switch the N\'eel vector…
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of…