相关论文: Cryogenic Behavior of High-Permittivity Gate Diele…

Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO…

The thermal effects of plastic and frictional heat generation and elevated temperature were examined along with the role of adhesion in the context of galling wear, using a representative crystal plasticity, normally loaded, sliding surface…

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on…

Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic…

Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared…

Lithium niobate has emerged as a promising platform for integrated quantum optics, enabling efficient generation, manipulation, and detection of quantum states of light. However, integrating single-photon detectors requires cryogenic…

The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently…

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…

The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{\deg}C exhibit the…

A process of atomic layer deposition combined with self assembled monolayers was used to investigate the possible modification of polyurethane paint surfaces. First, we used an ALD process to produce thin and uniform Al2O3 coatings of these…

The Poly(vinylidene fluoride)/CaCu3Ti4O12 (CCTO) nanocrystal composite films (85nm) with relatively high dielectric permittivity (90 at 100Hz) were prepared by the solution casting followed by spin coating technique. The structural, the…

This article identifies the process of crystallization of thin high-$\kappa$ dielectric films and an optimal range of annealing temperature in the field of high-$\kappa$ dielectric-based metal-oxide-semiconductor (MOS) technology for its…

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device…

We present results from cryogenic tests of Volume-Phase Holographic(VPH) gratings at 100 K. The aims of these tests are to see whether the diffraction efficiency as a function of wavelength is significantly different at a low temperature…

Temperature dependence of the thermal rate constants and kinetic isotope effects (KIE) of the CN + C2H6 gas-phase hydrogen abstraction reaction was theoretically determined within the 25-1000 K temperature range, i.e., from ultra-low to…

In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects.…

Layered hybrid perovskites containing larger organic cations have demonstrated superior environmental stability, but the presence of these insulating spacers also strengthens the exciton binding energy, which contributes to reduced carrier…