相关论文: Cryogenic Behavior of High-Permittivity Gate Diele…

Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is…

The resistivity of the two dimensional electron gas that forms at the interface of strontium titanate with various oxides is sensitive to irradiation with visible light. In this letter we present data on the interface between the band gap…

The temperature dependence of the electrical resistivity of the heterostructures consisting of single crystalline LaMnO$_3$ samples with different crystallographic orientations covered by the epitaxial ferroelectric…

We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behavior with films synthesized at room temperature. We…

Superconductivity has been observed for the 2D electron gas (2DEG) at the interface of KTaO3 with other oxides, with a transition temperature about an order of magnitude higher than its 3d cousin SrTiO3. The superconducting transition…

Current-voltage characteristics of Au~/~YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for…

We investigate the temperature response of the alkali-metal rattling modes in {\beta}-pyrochlores, AOs2O6 (A = K, Rb, Cs), from the results of ab initio molecular dynamics (MD) simulations performed at 20 K, 100 K, and 300 K. Our results…

Despite important breakthroughs in the last decade, the calculation of temperature dependent properties of solids still remains a challenging task, especially in the vicinity of structural phase transitions. We show that the combination of…

We reveal a colossal dielectric response of small (5 - 10 nm) oxygen-deficient HfxZr1-xO2 nanoparticles (x = 1 - 0.4), prepared by the solid-state organonitrate synthesis. The effective dielectric permittivity of the pressed HfxZr1-xO2…

Hafnia (HfO2) is a silicon-compatible dielectric material, yet stabilizing its desired but metastable ferroelectric phase remains challenging. Phase stability predictions by density functional theory (DFT) have provided crucial guidance,…

A simple and low cost apparatus has been designed and built to measure the electrical resistivity, ($\rho$), of metal and semiconductors in 300-620 K temperature range. The present design is suitable to do measurement on rectangular bar…

We perform first-principles calculations to explore electronic, thermodynamic, and dielectric properties of two-dimensional (2D) layered, alkaline-earth hydroxides Ca(OH)2 and Mg(OH)2. We calculate the lattice parameters, exfoliation…

The resistance of the electron gas at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves during cooling and warm-up look identical for large area…

CaCu3Ti4O12 (CCTO) ceramics which has perovskite structure gained considerable attention due to its giant permittivity. But, it has high tan {\delta} (0.1 at 1kHz) at room temperature, which needs to be minimised to the level of practical…

Realizing non-volatile control of superconductivity is a key step toward integrating memory and quantum functionality in future information technologies. KTaO_3-based heterostructures uniquely host both interfacial two-dimensional…

A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$,…

Using the bottom-up approach in a holographic setting, we attempt to study both the transport and thermodynamic properties of a generic system in 3+1 dimensional bulk spacetime. We show the exact 1/T and $T^2$ dependence of the longitudinal…

Zirconia (ZrO2) and hafnia (HfO2) are leading candidates for replacing SiO2 as the gate insulator in CMOS technology. Amorphous versions of these materials (a-ZrO2 and a-HfO2)) can be grown as metastable phases on top of a silicon buffer;…

The electronic, structural, optical, and thermoelectric properties of the Cs2O cubic structure have been investigated using density functional theory (DFT). The calculations utilize a full relativistic version of the full-potential…

The dielectric behavior of the single crystals of the spin-chain system Ca3Co2O6, undergoing geometrically frustrated antiferromagnetic ordering below 25 K, has been investigated as a function of temperature and magnetic field (H) and…