相关论文: Cryogenic Behavior of High-Permittivity Gate Diele…

In this work, the effects of thermal annealing at 500 {\deg}C on aerosol-deposited $0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}$ thick films on stainless-steel substrates are investigated using two…

We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10}…

The ionic conduction properties of the technologically important two-dimensional (2D) layered battery material Na2Mn3O7, with exceptional small-voltage hysteresis between charge and discharge curves, have been investigated as a function of…

The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18…

The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in…

Expressions for dependences of the pre-exponential factor \sigma_3 and the thermal activation energy \epsilon_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are…

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free,…

Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric…

HfO$_2$ is an important high-$\kappa$ dielectric and ferroelectric, exhibiting a complex potential energy landscape with several phases close in energy. It is, however, a strongly anharmonic solid, and thus describing its…

A metallic surface is realized on stoichiometric and insulating (100) SrTiO$_3$ by Ar$^+$ - ion irradiation. The sheet carrier density and Hall mobility of the layer are $\sim$$4.0$ $\times$ $10^{14}$ $/cm^2$ and $\sim$$2$ $\times$ $10^3$…

We synthesize the high-quality Gd$_3$BWO$_9$ single crystal and investigate its lowtemperature magnetic and thermodynamic properties. Below $T\rm_{N}$ = 1.08 K, the anisotropic behavior of magnetic susceptibilities reveals that the…

We use scanning tunneling microscopy to study the temperature evolution of electronic structure in Ca3Cu2O4Cl2 parent Mott insulator of cuprates. We find that the upper Hubbard band moves towards the Fermi energy with increasing…

Electronic properties of ultrathin dielectric films consistently attract much attention since they play important roles in various electronic devices, such as field effect transistors and memory elements. Insulating properties of the gate…

We exhibit an interaction-driven metal-insulator quantum phase transition in a holographic model. Use of a helical lattice enables us to break translation invariance while preserving homogeneity. The metallic phase is characterized by a…

Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better…

We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for…

Single crystals of KOs2O6 have been grown in a sealed quartz ampoule. Detailed single crystal X-ray diffraction studies at room temperature show Bragg peaks that violate Fd-3m symmetry. With a comparative structure refinement the structure…

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy…

We developed a soft and high thermal conductive heat link for cryogenic applications. The measured maximum thermal conductivity was approximately 18500 W/m/K at 10 K. This spring constant was 1/43 of that of a single thick wire with the…

This work reports the first study of periodically poled piezoelectric film (P3F) lithium niobate (LiNbO3) resonators at cryogenic temperatures. We experimentally investigate the temperature dependency of resonant frequencies and quality…