相关论文: Can we improve the energy efficiency of EUV lithog…
This paper proposes a simple, four-mirror, in-line projector for high-NA EUV lithography that eliminates the most troublesome mask 3D effect. The design consists of a two-stage concave-convex pair, where optical aberrations are cancelled…
A critical technology for high-volume manufacturing of nanoscale integrated circuits is a high-power extreme ultraviolet (EUV) light source. Over the past decades, laser-produced plasma (LPP) sources have been actively utilized in this…
Using the illuminator for high numerical aperture (NA) extreme ultraviolet (EUV) exposure tool in EUV lithography can lead to support volume production of sub-2 nm logic nodes and leading-edge DRAM nodes. However, the typical design method…
Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale…
Plane-parallel resonator configuration is proposed for high-NA EUV lithography, where the lithography mask and the wafer are parallelly arranged through two focusing mirrors. EUV light is injected through an off-axis rotating mirror at the…
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel…
We adapted a conventional microscope for projection photolithography using an ultraviolet (UV) light-emitting diode (LED) as a light source. The use of a UV LED provides the microscope projector with several advantages in terms of…
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA)…
In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and…
Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of \SI{13.5}{\nano\meter} is currently under development. In principle, this…
Extreme Ultraviolet (EUV) photolithography is seen as the key enabler for increasing transistor density in the next decade. In EUV lithography, 13.5 nm EUV light is illuminated through a reticle, holding a pattern to be printed, onto a…
Microscopy with extreme ultraviolet (EUV) radiation holds promise for high-resolution imaging with excellent material contrast, due to the short wavelength and numerous element-specific absorption edges available in this spectral range. At…
Light-matter interactions in the deep ultraviolet (DUV) wavelength region exhibits a variety of optical effects such as luminescence, photoisomerization, and polymerization in many materials. Despite the rich photochemistry and high spatial…
We present high-speed and wide-field EUV ptychography at 13.5 nm wavelength using a table-top high-order harmonic source. By employing a scientific complementary metal oxide semiconductor (sCMOS) detector the scan time for sub-20 nm…
A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for…
A custom, flat field, extreme ultraviolet EUV spectrometer built specifically for use with low power light sources that operate under ultrahigh vacuum conditions is reported. The spectral range of the spectrometer extends from 4 nm to 40…
An OLED architecture is described in which a thin emitter layer is located at the anti-node of a resonant microcavity. In two realizations, the mode space is constrained by either multi-layer mirrors or by an emitter with transition dipole…
Next generation EUV sources for photolithography use light produced by laser-produced plasmas (LPP) from ablated tin droplets. A major challenge for extending the lifetime of these devices is mitigating damage caused by deposition of tin…
For many applications of extreme ultraviolet (XUV) and x-ray pulses a small focus size is crucial to reach the required intensity or spatial resolution. In this article, we present a simple way to characterize an XUV focus with a resolution…
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production…