相关论文: Scandium Aluminum Nitride Overmoded Bulk Acoustic …

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2)…

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum…

This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and…

This paper reports an 11.7 GHz compact 50 ohm ladder filter based on single layer Scandium Aluminum Nitride (ScAlN) film bulk acoustic resonators (FBARs) with platinum (Pt) electrodes, and uses it as a quantitative case study of the limits…

Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…

In the last decades, Bulk-Acoustic-Wave (BAW) filters have been essential components of 1G-to-4G radios. These devices rely on the high electromechanical coupling coefficient (kt2~7%), attained by Aluminum Nitride (AlN)…

This work presents a new acoustic MEMS resonator technology, dubbed Aluminum Nitride (AlN) Combined Overtone Resonator (COR), capable of addressing the filter requirements for the 5G mmWave spectrum in the 6-40GHz range. The COR exploits…

Radiofrequency (RF) front ends for current and next generation (5G and 6G) wireless communication demand acoustic filters that combine wide bandwidth, high power capability, and thermal stability. Existing surface and bulk acoustic wave…

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) bottom electrode, positioned above an…

This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for…

In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality…

A high-overtone bulk acoustic resonator (HBAR), in which a piezoelectric transducer is set on an acoustic cavity, has been attracting attention in both fundamental research and RF applications due to its scalability, high frequency, and…

Aluminum nitride (AlN)-based thin-film bulk acoustic wave resonators (FBARs) are promising compact platforms for 6G communications and quantum memory hardware, enabled by their integrable acoustic modes with high quality factors. However,…

This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide…

We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances.…

This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride…

Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…

This work reports on the measured performance of an Aluminum Scandium Nitride (AlScN) Two-Dimensional Resonant Rods resonator (2DRR), fabricated by using a Sc-doping concentration of 24%, characterized by a low off-resonance impedance (~25…

High overtone bulk acoustic resonators are essential components in microwave signal processing and emerging quantum technologies; however, conventional designs suffer from limited impedance matching, spurious mode interference, and…

This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results…