相关论文: Understanding disorder in Silicon quantum computin…

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite size calculation of the low frequency optical conductivity. At weak electron-spin coupling spin disorder leads to a…

We drive a quantum kinetic equation under discrete impurities for the Wigner function from the quantum Liouville equation. To attain this goal, the electrostatic Coulomb potential is separated into the long- and short-range parts, and the…

We study quantum transport in Q1D wires made of a 2D conductor of width W and length L>>W. Our aim is to compare an impurity-free wire with rough edges with a smooth wire with impurity disorder. We calculate the electron transmission…

In this article we develop an exact(non-adiabatic,non-perturbative) density matrix scattering theory for a two component quantum liquid which interacts or scatters off from a generic spin-dependent quantum potential. We find that the number…

InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…

A general density-matrix formulation of quantum-transport phenomena in semiconductor nanostructures is presented. More specifically, contrary to the conventional single-particle correlation expansion, we shall investigate separately the…

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured.…

We have studied the effects of strong impurity scattering on disordered superconductors beyond the low impurity concentration limit. By applying the full CPA to a superconductiong A-B binary alloy, we calculated the fluctuations of the…

Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band…

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…

The effect of coordination on transport is investigated theoretically using random networks of springs as model systems. An effective medium approximation is made to compute the density of states of the vibrational modes, their energy…

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such…

Recently, superconductivity has been observed in twisted WSe$_2$ moir\'{e} structures (Xia et al., Nature 2024; Guo et al., Nature 2025). Its transition temperature is high, reaching a few percent of the Fermi temperature scale. Here, we…

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…

Spin-orbit interaction (SOI) is a crucial ingredient for many potential applications of quantum devices, such as the use of semiconductor nanostructures for quantum computing. It is known that nonlinear conductivities are sensitive to the…

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal…

We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are…

In this paper we study transport properties of electrons on the two-dimensional honeycomb lattice. We consider a half-filled system in the vicinity of a symmetry-breaking transition from a semimetallic phase towards an insulating phase with…

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both…