相关论文: Understanding disorder in Silicon quantum computin…
Irradiation of superconductors with different particles is one of many ways to investigate effects of disorder. Here we study the disorder-induced transition between $s_\pm$ and $s_{++}$ states in two-band model for Fe-based superconductors…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…
We look for manifestations of quantum interference effects in the Seebeck coefficient of a molecular junction, when the electronic conductance exhibits pronounced destructive interference features due to the presence of quasi-degenerate…
While the disorder-induced quantum Hall (QH) effect has been studied previously, the effect ofdisorder potential on microscopic features of the integer QH effect remains unclear, particularly forthe incompressible (IC) strip. In this…
We consider the problem of electron transport along a one-dimensional disordered multiple-scattering conductor, and study the electron density for all the electronic levels. A model is proposed for the reduced density matrix of the system…
Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from…
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a…
Recent advances in transport properties measurements of disordered materials and lattice simulations, using superconducting qubits, have rekindled interest in Anderson localization, motivating our study of highly disordered quantum…
We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…
Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…
The Spin-Orbit Proximity Effect is the raise of Spin-Orbit Coupling at a layer near to the interface with a strong spin-orbit material. It has been seen in several system such as graphene and ferromagnetic layers. The control of the…
A quantum spin Hall insulator is a two-dimensional state of matter consisting of an insulating bulk and one-dimensional helical edge states. While these edge states are topologically protected against elastic backscattering in the presence…
The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent…
Two-terminal spintronic devices remain challenging to model under realistic operating conditions, where the interplay of complex electronic structures, correlation effects and bias-driven non-equilibrium dynamics may significantly impact…
Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms…
We examine the effect of structural disorder and dynamical lattice fluctuation on charge migration dynamics starting from a birth of local exciton in a quantum network of molecular aggregates by using model Hamiltonians having complicate…
Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection…
To account for the anomalous/spin Hall conductivities and spin-orbit torque in the zeroth order of electron scattering time in strongly spin-orbit coupled systems, the Boltzmann transport theory in the case of weak disorder-potentials has…