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相关论文: Magneto-transport in the monolayer MoS2 material s…

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We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase…

介观与纳米尺度物理 · 物理学 2013-08-06 Adam T. Neal , Han Liu , Jiangjiang Gu , Peide D. Ye

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

A momentum balance equation is developed to investigate the magnetotransport properties in monolayer molybdenum disulphide when a strong perpendicular magnetic field and a weak in-plane electric field are applied simultaneously. At low…

介观与纳米尺度物理 · 物理学 2015-09-10 C. M. Wang , X. L. Lei

We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…

介观与纳米尺度物理 · 物理学 2025-07-16 Ahmed Jellal , Nadia Benlakhouy , Pablo Díaz , David Laroze

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…

介观与纳米尺度物理 · 物理学 2009-11-10 W. Desrat , F. Giazotto , V. Pellegrini , F. Beltram , F. Capotondi , G. Biasiol , L. Sorba , D. K. Maude

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of…

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…

介观与纳米尺度物理 · 物理学 2014-12-08 Leiqiang Chu , Hennrik Schmidt , Jiang Pu , Shunfeng Wang , Barbaros Özyilmaz , Taishi Takenobu , Goki Eda

We have grown the MoAs$_2$ single crystal which crystallizes in a monoclinic structure with C2/m space group. Transport measurements show that MoAs$_2$ displays a metallic behavior at zero field and undergoes a metal-to-semiconductor…

材料科学 · 物理学 2017-11-28 Jialu Wang , Lin Li , Wei You , Tingting Wang , Chao Cao , Jianhui Dai , Yuke Li

The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the…

介观与纳米尺度物理 · 物理学 2015-06-12 Xiaodong Li , Jeffrey T. Mullen , Zhenghe Jin , Kostyantyn M. Borysenko , M. Buongiorno Nardelli , Ki Wook Kim

The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

介观与纳米尺度物理 · 物理学 2015-06-12 Michael S. Fuhrer , James Hone

Electronic and thermoelectric properties of a two-dimensional MoS2 monolayer containing atomic defects are investigated using density functional theory. All the atomic defects have been found to exhibit endothermic nature. Electronic…

介观与纳米尺度物理 · 物理学 2019-05-17 Munish Sharma , Ashok Kumar , P. K. Ahluwalia

We report transport measurement in zero and applied magnetic field on a single crystal of NbAs. Transverse and longitudinal magnetoresistance in the plane of this tetragonal structure does not saturate up to 9 T. In the transverse…

材料科学 · 物理学 2015-06-24 N. J. Ghimire , Yongkang Luo , M. Neupane , D. J. Williams , E. D. Bauer , F. Ronning

Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors…

计算物理 · 物理学 2024-04-23 Ying Li , Yang Shen , Linqiang Xu , Shiqi Liu , Yang Chen , Qiuhui Li , Zongmeng Yang , Xiaotian Sun , He Tian , Jing Lu

We report resistivity $\rho$ and Hall effect measurements on EuFe$_2$As$_2$ at ambient pressure and 28 kbar and magnetization measurements at ambient pressure. We analyze the temperature and magnetic-field dependence of $\rho$ and the Hall…

We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…

材料科学 · 物理学 2023-07-22 W. Afzal , F. Yun , Z. Li , Z. Yue , W. Zhao , L. Sang , G. Yang , Y. He , G. Peleckis , M. Fuhrer , X. Wang

Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…

Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…

介观与纳米尺度物理 · 物理学 2015-06-22 Zhenghe Jin , Xiaodong Li , Jeffrey Thomas Mullen , Ki Wook Kim
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