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相关论文: Renormalization of the band gap in 2D materials ne…

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Recently the renormalization of the band gap $m$, in both WSe$_2$ and MoS$_2$, has been experimentally measured as a function of the carrier concentration $n$. The main result establishes a decreasing of hundreds of meV, in comparison with…

高能物理 - 理论 · 物理学 2020-08-05 Luis Fernández , Van Sérgio Alves , Leandro O. Nascimento , Francisco Peña , M. Gomes , E. C. Marino

Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at…

介观与纳米尺度物理 · 物理学 2017-12-14 Shiyuan Gao , Li Yang

We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and…

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay…

Dielectric screening plays a crucial role in shaping the electronic structure of two-dimensional (2D) materials. In 2D semiconductors, screened Coulomb interactions arising from the surrounding dielectric environment are known to induce…

强关联电子 · 物理学 2026-05-01 Woojoo Lee , Seungwoo Yoo , Marios Zacharias , Junho Choi , Young-Kyun Kwon

The idea of combining different two-dimensional (2D) crystals in van der Waals heterostructures (vdWHs) has led to a new paradigm for band structure engineering with atomic precision. Due to the weak interlayer couplings, the band…

介观与纳米尺度物理 · 物理学 2017-03-10 Kirsten T. Winther , Kristian S. Thygesen

Electronic and optical properties of materials are affected by atomic motion through the electron-phonon interaction: not only band gaps change with temperature, but even at absolute zero temperature, zero-point motion causes band-gap…

The quasiparticle band-gap renormalization induced by the doped carriers is an important and well-known feature in two-dimensional semiconductors, including transition-metal dichalcogenides (TMDs), and it is of both theoretical and…

介观与纳米尺度物理 · 物理学 2021-09-01 Azadeh Faridi , Dimitrie Culcer , Reza Asgari

We analyze mass renormalization in massive Dirac-like systems in (2+1) dimensions arising from electron-phonon interactions at finite temperatures, employing the large-$N$ expansion. Our model combines the low-energy description of charge…

强关联电子 · 物理学 2025-06-24 Nilberto Bezerra , Van Sérgio Alves , Leandro O. Nascimento , Luis Fernández

The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric…

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

Two Dimensional (2D) Transition Metal Dichalcogenides (TMDs) possess a large direct band gap which has been experimentally observed to shrink with increasing charge carrier density (doping). The effect has been the subject of theoretical…

介观与纳米尺度物理 · 物理学 2025-01-16 Jack N. Engdahl , Harley D. Scammell , Dmitry K. Efimkin , Oleg P. Sushkov

In reduced-dimensional semiconductors, doping-induced carrier plasmons can strongly couple with quasiparticle excitations, leading to a significant band gap renormalization. We develop a new plasmon-pole theory that efficiently and…

介观与纳米尺度物理 · 物理学 2015-02-11 Yufeng Liang , Li Yang

We describe both the Fermi velocity and the mass renormalization due to the two-dimensional Coulomb interaction in the presence of a thermal bath. To achieve this, we consider an anisotropic version of pseudo quantum electrodynamics (PQED),…

介观与纳米尺度物理 · 物理学 2023-09-19 Nilberto Bezerra , Van Sérgio Alves , Leandro O. Nascimento , Luis Fernandez

We study effects of a repulsive Coulomb interaction on the spectral gap in monolayer and bilayer graphene in the vicinity of the charge neutrality point by employing the functional renormalization-group technique. In both cases Coulomb…

强关联电子 · 物理学 2011-04-01 Andreas Sinner , Klaus Ziegler

Random impedance networks are widely used as a model to describe plasmon resonances in disordered metal-dielectric nanocomposites. In order to study thin films, two-dimensional networks are often used despite the fact that such networks…

介观与纳米尺度物理 · 物理学 2018-11-06 Nikita Olekhno , Yaroslav Beltukov

We derive a dielectric-dependent hybrid functional which accurately describes the electronic properties of heterogeneous interfaces and surfaces, as well as those of three- and two-dimensional bulk solids. The functional, which does not…

材料科学 · 物理学 2019-07-17 Huihuo Zheng , Marco Govoni , Giulia Galli

A wide range of materials like graphene, topological insulators and transition metal dichalcogenides (TMDs) share an interesting property: the low energy excitations behave as Dirac particles. This emergent behavior of Dirac quasiparticles…

强关联电子 · 物理学 2018-11-07 Leone Di Mauro Villari , Ian Galbraith , Fabio Biancalana

We investigate the dynamical self-energy corrections of the electron-hole plasma due to electron-electron and electron-phonon interactions at the band edges of a quasi-one dimensional (1D) photoexcited electron-hole plasma. The…

介观与纳米尺度物理 · 物理学 2009-10-31 E. H. Hwang , S. Das Sarma

A theoretical investigation is made of the dispersion characteristics of plasmons in a two-dimensional periodic system of semiconductor (dielectric) cylinders embedded in a dielectric (semiconductor) background. We consider both square and…

介观与纳米尺度物理 · 物理学 2009-10-31 Manvir S. Kushwaha
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