相关论文: Metal Inter-layer Via Keep-out-zone in M3D IC: A C…

We present tomography of the circum-galactic metal distribution at redshift 1.7 to 4.5 derived from echellete spectroscopy of binary quasars. We find CIV systems at similar redshifts in paired sightlines more often than expected for…

We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at…

Using our photoionization code CIRRUS, we show that the study of proximity effect on metal elements provides a possibility of placing constraints on the spectral shape of the metagalactic UV background (MUVB). From theoretical point of…

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better…

Large-scale arrays of Microwave Kinetic Inductance Detectors (MKIDs) are attractive candidates for use in imaging instruments for next generation submillimeter-wave telescopes such as CCAT. We have designed and fabricated tightly packed…

Molecular communication via diffusion (MCvD) is a method of achieving nano- and micro-scale connectivity by utilizing the free diffusion mechanism of information molecules. The randomness in diffusive propagation is the main cause of…

We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant…

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…

Vanadium dioxide (VO$_2$) undergoes a metal-insulator transition (MIT) at 340 K with the structural change between tetragonal and monoclinic crystals as the temperature is lowered. The conductivity $\sigma$ drops at MIT by four orders of…

Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive…

Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM)…

The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality.…

We report that the second and third harmonic signal reductions with insulator film surface coverage over a gold substrate gives a measure of the electron density in the spill out volume of the insulator, which is dubbed metal insulator gap…

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…

Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic…

In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of…

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…

Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated…

3D die stacking and 2.5D interposer design are promising technologies to improve integration density, performance and cost. Current approaches face serious issues in dealing with emerging security challenges such as side channel attacks,…