相关论文: Low-Frequency Electronic Noise in the Aluminum Gal…
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for…
We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^{\alpha} character as seen in…
The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of…
We report that low frequency (up to 200 kHz) noise spectra of magnetic tunnel junctions with areas ~10^{-10}cm^2$ at 10 Kelvin deviate significantly from the typical 1/f behavior found in large area junctions at room temperature. In most…
Fluctuations pose fundamental limitations in making sensitive measurements, yet at the same time, noise unravels properties that are inaccessible at the level of the averaged signal. In electronic devices, shot noise arises from the…
This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device…
We show that 1/f noise is produced in a 3D electron glass by charge fluctuations due to electrons hopping between isolated sites and a percolating network at low temperatures. The low frequency noise spectrum goes as \omega^{-\alpha} with…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the…
$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a…
The close-in AM noise is often neglected, under the assumption that it is a minor problem as compared to phase noise. With the progress of technology and of experimental science, this assumption is no longer true. Yet, information in the…
At low temperatures electron hopping in a three dimensional Coulomb glass produces fluctuations in the single particle density of states and hence in the resistivity. This results in a low frequency resisitivity noise spectrum which goes as…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky…
In this paper the theory of high-frequency acoustic signal detection by Schottky diodes is presented. Physically, the detection was found to be due to the quasi-static screening of the potential perturbation caused by the acoustic strain by…
We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within…
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects…
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the…
We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of…
Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance…