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Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…

We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes…

应用物理 · 物理学 2018-03-02 Vinod K. Sangwan , Hong-Sub Lee , Mark C. Hersam

Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand…

介观与纳米尺度物理 · 物理学 2024-09-12 Sameer Kumar Mallik

Emerging continual learning applications necessitate next-generation neural processing unit (NPU) platforms to support both training and inference operations. The promising Microscaling (MX) standard enables narrow bit-widths for inference…

硬件体系结构 · 计算机科学 2026-03-13 Stef Cuyckens , Xiaoling Yi , Robin Geens , Joren Dumoulin , Martin Wiesner , Chao Fang , Marian Verhelst

Traditional von Neumann architecture based processors become inefficient in terms of energy and throughput as they involve separate processing and memory units, also known as~\textit{memory wall}. The memory wall problem is further…

信号处理 · 电气工程与系统科学 2020-05-20 Abhash Kumar , Jawar Singh , Sai Manohar Beeraka , Bharat Gupta

We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices…

介观与纳米尺度物理 · 物理学 2020-12-08 Bablu Mukherjee , Ryoma Hayakawa , Kenji Watanabe , Takashi Taniguchi , Shu Nakaharai , Yutaka Wakayama

Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated…

We designed a device for Convolution Neural Network applications with non-volatile MRAM memory and computing-in-memory co-designed architecture. It has been successfully fabricated using 22nm technology node CMOS Si process. More than 40MB…

信号处理 · 电气工程与系统科学 2018-11-30 Baohua Sun , Daniel Liu , Leo Yu , Jay Li , Helen Liu , Wenhan Zhang , Terry Torng

The discovery of two-dimensional (2D) materials with tailored properties is critical to meet the increasing demands of high-performance applications across flexible electronics, optoelectronics, catalysis, and energy storage. However,…

材料科学 · 物理学 2025-07-02 Zhongwei Liu , Zhimin Zhang , Xuwei Liu , Mingjia Yao , Xin He , Yuanhui Sun , Xin Chen , Lijun Zhang

Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including graphene, hexagonal-boron nitride, and transition metal…

介观与纳米尺度物理 · 物理学 2014-08-26 Xiaoping Hong , Jonghwan Kim , Su-Fei Shi , Yu Zhang , Chenhao Jin , Yinghui Sun , Sefaattin Tongay , Junqiao Wu , Yanfeng Zhang , Feng Wang

Neuromorphic computing describes the use of VLSI systems to mimic neuro-biological architectures and is also looked at as a promising alternative to the traditional von Neumann architecture. Any new computing architecture would need a…

新兴技术 · 计算机科学 2020-09-01 Karn Dubey , Urja Kothari , Shrisha Rao

The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…

材料科学 · 物理学 2014-07-17 Yingnan Liu , Rudresh Ghosh , Di Wu , Ariel Ismach , Rodney Ruoff , Keji Lai

We propose and analyze a compact and non-volatile nanomagnetic (all-spin) non-binary matrix multiplier performing the multiply-and-accumulate (MAC) operation using two magnetic tunnel junctions - one activated by strain to act as the…

新兴技术 · 计算机科学 2023-02-28 Rahnuma Rahman , Supriyo Bandyopadhyay

The rapid surge in data generated by Internet of Things (IoT), artificial intelligence (AI), and machine learning (ML) applications demands ultra-fast, scalable, and energy-efficient hardware, as traditional von Neumann architectures face…

Data movement is the dominating factor affecting performance and energy in modern computing systems. Consequently, many algorithms have been developed to minimize the number of I/O operations for common computing patterns. Matrix…

分布式、并行与集群计算 · 计算机科学 2021-01-26 Johannes de Fine Licht , Grzegorz Kwasniewski , Torsten Hoefler

We show theoretically that networks of membrane memcapacitive systems -- capacitors with memory made out of membrane materials -- can be used to perform a complete set of logic gates in a massively parallel way by simply changing the…

新兴技术 · 计算机科学 2015-07-09 Yuriy V. Pershin , Fabio L. Traversa , Massimiliano Di Ventra

Edge computing must be capable of executing computationally intensive algorithms, such as Deep Neural Networks (DNNs) while operating within a constrained computational resource budget. Such computations involve Matrix Vector…

硬件体系结构 · 计算机科学 2023-10-24 Arani Roy , Kaushik Roy

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

The Von Neumann bottleneck, a fundamental challenge in conventional computer architecture, arises from the inability to execute fetch and data operations simultaneously due to a shared bus linking processing and memory units. This…

分布式、并行与集群计算 · 计算机科学 2024-12-10 Md Tawsif Rahman Chowdhury , Huynh Quang Nguyen Vo , Paritosh Ramanan , Murat Yildirim , Gozde Tutuncuoglu

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related…