相关论文: Atomic scale localization of Kohn-Sham wavefunctio…

First-principles methods have recently established themselves in the field of photocathode research to provide microscopic, quantum-mechanical characterization of relevant materials for electron sources. While most of the existing studies…

We present ab-initio electronic structure calculations for the Si-terminated SiC(0001)$\sqrt{3}\times\sqrt{3}$ surface. While local density approximation (LDA) calculations predict a metallic ground state with a half-filled narrow band,…

Ion transport across solid solid interfaces is often slower than through the bulk of a material, impeding the charge and discharge rate of batteries. Designing highly conductive interfaces is challenging due to the need to probe ion…

In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…

The electronic structure and magnetic properties of CaCr$\mathrm{O}_3$ have been calculated by two methods, including hybrid-exchange density-function theory and density-functional theory + $U$. The computed densities of states from both of…

We survey the Si K edge structure in various absorbed Galactic low-mass X-ray binaries (LMXBs) to study states of silicon in the inter- and circum-stellar medium. The bulk of these LMXBs lie toward the Galactic bulge region and all have…

Unusual features in the bias dependence of spin transport are observed in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic…

We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…

The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…

A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in…

The atomic and electronic structures of the (001)-Si/(001)-gamma-Al2O3 heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all…

We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in…

The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…

Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in pure liquid silicon for investigating the structure and morphology evolution of the SiC surface as a function of both azimuthal and off-axis angles. Different…

This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…

The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the…

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…

Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is…