相关论文: Atomic scale localization of Kohn-Sham wavefunctio…
Electrical conductivity (EC) is one of the important physical properties of minerals and rocks that can be used to characterize the composition and structure of the deep interior of the Earth.Theoretical studies have predicted that the…
The effect of the SiO$_2$ substrate on a graphene film is investigated using realistic but computationally convenient energy-optimized models of the substrate supporting a layer of graphene. The electronic bands are calculated using…
An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model…
Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this…
The model of Kondo chain with $M$-fold degenerate band of conduction electrons of spin 1/2 at half filling interacting with localized spins $S$ is studied. It is shown that due to the instanton effects the spin sector reveals itself in…
Topological semimetals in BaAl4-type structure show many interesting behaviors, such as charge density wave (CDW) in SrAl4 and EuAl4, but not the isostructural and isovalent BaAl4, SrGa4 and BaGa4. Here using Wannier functions based on…
We present a new study of the nonlinear transport of a two-dimensional electron crystal on the surface of liquid helium confined in a 10 micrometer-wide channel in which the effective length of the crystal can be varied from 10 to 215…
Tailoring ion energy distribution function (IEDF) is vital for advanced plasma processing applications. Capacitively coupled plasma (CCP) discharges excited using non-sinusoidal waveform have shown its capability to control IEDF through…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate for implementing a spin-photon interface. These interfaces are…
We analyze the interaction of a propagating guided electromagnetic wave with a quantum well embedded in a dielectric slab waveguide. First, we design a quantum well based on InAlGaAs compounds with the transition energy of 0.8eV…
We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the…
(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and…
Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To…
Low field and high field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold f_c=0.33%, transport is due to hopping of localized charge carriers with a…
Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a…
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical…
The analysis of all published results on electrons and holes impact ionization coefficients in 4H-SiC at 300K have been performed. It is shown that the most plausible approximation of dependencies $\alpha_{n,p}$ on the electric field…
We present a computational scheme for extracting the energy level alignment of a metal/molecule interface, based on constrained density functional theory and local exchange and correlation functionals. The method, applied here to benzene on…
The surface acoustic wave (SAWs) attenuation coefficient $\Gamma$ and the velocity change $\Delta V /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up…