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We present theoretical studies of morphology, stability, and electronic structure of monolayer hexagonal CBN alloys with rich content of h-BN and carbon concentration not exceeding 50 %. Our studies are based on the bond order type of the…

材料科学 · 物理学 2019-06-26 Agnieszka Jamróz , Jacek A. Majewski

The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet…

We present a comprehensive first-principles investigation of the structural, electronic, and vibrational properties of four layered boron nitride (BN) polymorphs--AA-stacked ($e$-BN), AA$^\prime$-stacked ($h$-BN), ABC-stacked ($r$-BN), and…

材料科学 · 物理学 2025-05-23 Priyanka Mishra , Nevill Gonzalez Szwacki

We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (\Pblue) on hBN by means of ab-intio density functional theory. Emphasis is put on…

材料科学 · 物理学 2020-07-15 Baptiste Bienvenu , Hakim Amara , François Ducastelle , Lorenzo Sponza

Principal characteristics of interlayer interaction and relative motion of hexagonal boron nitride (h-BN) layers are investigated by the first-principles method taking into account van der Waals interactions. Dependences of the interlayer…

介观与纳米尺度物理 · 物理学 2016-04-13 Alexander V. Lebedev , Irina V. Lebedeva , Andrey A. Knizhnik , Andrey M. Popov

The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

强关联电子 · 物理学 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on…

Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high…

介观与纳米尺度物理 · 物理学 2018-11-28 Yohanes S. Gani , D. S. L. Abergel , Enrico Rossi

Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions…

介观与纳米尺度物理 · 物理学 2014-10-08 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

Two-dimensional (2D) nitride materials such as hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C$_3$N$_4$), and beryllonitrene (BeN$_4$) have emerged as promising candidates for next generation electronic, optoelectronic, and…

材料科学 · 物理学 2025-10-16 Shreya G. Sarkar , Kuneh Parag Shah , Brahmananda Chakraborty

We perform the first-principles many-body GW and Bethe-Salpeter equation (BSE) calculations on the two-dimensional hexagonal boron nitride (2D-hBN) to explore the effects of opposite atoms on the electronic structure and linear one-photon…

材料科学 · 物理学 2023-01-04 You-Zhao Lan

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we…

材料科学 · 物理学 2015-10-08 Y. Hattori , K. Watanabe , T. Taniguchi , K. Nagashio

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , Z. Klusek

The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic…

Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. We here investigate experimentally and theoretically…

We investigate theoretically the electronic structure of graphene and boron nitride (BN) lateral heterostructures, which were fabricated in recent experiments. The first-principles density functional calculation demonstrates that a huge…

介观与纳米尺度物理 · 物理学 2016-07-04 Dong Zhang , Maosheng Miao , Fuhua Yang , Haiqing Lin , Kai Chang

The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable…

介观与纳米尺度物理 · 物理学 2018-09-03 Rebeca Ribeiro-Palau , Changjian Zhang , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

In binary compound 2D insulators/semiconductors such as hexagonal boron nitride (hBN), the different electron affinities of atoms can give rise to out-of-plane electric polarizations across inversion asymmetric van der Waals interface of…

介观与纳米尺度物理 · 物理学 2023-09-04 Hongyi Yu , Ziheng Zhou , Wang Yao

Moir\'e superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moir\'e potential of the superlattice, however, is fixed by the…

Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes…