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Structural engineering opens a door to manipulating the structures and thus tuning the properties of two-dimensional materials. Here, we report a reversible structural transition in honeycomb CuSe monolayer on Cu(111) through scanning…

材料科学 · 物理学 2026-04-14 Yuan Zhuang , Yande Que , Chaoqiang Xu , Bin Liu , Xudong Xiao

Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were…

材料科学 · 物理学 2020-04-07 Jiating Lu , Xi Zhang , Limeng Shen , Ya Nie , Gang Xiang

We characterize the electronic structure and elasticity of monolayer transition-metal dichalcogenides MX2 (M=Mo, W, Sn, Hf and X=S, Se, Te) with 2H and 1T structures using fully relativistic first principles calculations based on density…

材料科学 · 物理学 2015-06-18 David M. Guzman , Alejandro Strachan

In the field of 2D materials, transition metal dichalcogenides (TMDs) are gaining attention for electronic applications. Our study delves into the H-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structure and how strain…

材料科学 · 物理学 2024-01-18 Oguzhan Orhan , Şener Özönder , Soner Ozgen

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and…

Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…

We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and…

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin…

Sliding and twisting van der Waals layers with respect to each other gives rise to moir\'e structures with emergent electronic properties. Electrons in these moir\'e structures feel weak potentials that are typically in the tens of…

介观与纳米尺度物理 · 物理学 2020-07-14 Drew Edelberg , Hemant Kumar , Vivek Shenoy , Héctor Ochoa , Abhay N. Pasupathy

The exploration of superconductivity in low-dimensional materials has attracted intensive attention for decades. Based on first-principles electronic structure calculations, we have systematically investigated the electronic and…

超导电性 · 物理学 2022-04-05 Xiao-Le Qiu , Jian-Feng Zhang , Huan-Cheng Yang , Zhong-Yi Lu , Kai Liu

Interest in the application of thermoelectric devices for renewable energy has risen over the past decade. In this paper, we calculate the transport properties of various configurations of the transition metal dichalcogenide (TMD) MSe$_2$…

材料科学 · 物理学 2020-02-26 Jonathan Tseng , Xuan Luo

Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed…

介观与纳米尺度物理 · 物理学 2018-01-18 Y. M. Jaques , P. Manimunda , Y. Nakanishi , S. Susarla , C. F. Woellner , S. Bhowmick , S. A. S. Asif , D. S. Galvão , C. S. Tiwary , P. M. Ajayan

Molybdenum disulfide (MoS$_2$) has attracted interest owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of…

材料科学 · 物理学 2024-01-26 A. Setiawan , I. P. Handayani , E. Suprayoga

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However,…

Our First-principles Full-Potential Density Functional Theory (DFT) calculations show that a monolayer of ZnS (ML-ZnS), which is predicted to adopt a graphene-like planar honeycomb structure with a direct band gap, undergoes strain-induced…

介观与纳米尺度物理 · 物理学 2014-01-27 Harihar Behera , Gautam Mukhopadhyay

Transition metal dichalcogenide (TMD) monolayers attract great attention due to their specific structural, electronic and mechanical properties. The formation of their lateral heterostructures allows a new degree of flexibility in…

材料科学 · 物理学 2020-09-29 Sadegh Imani Yengejeh , William Wen , Yun Wang

Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition…

In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigated the effect of stacking configuration, bi-axial…

计算物理 · 物理学 2018-02-27 Kanak Datta , Quazi D. M. Khosru

Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…

材料科学 · 物理学 2026-04-30 Yangchen He , Jessica Kienbaum , Wuzhang Fang , Hongrui Ma , Ying Wang , Ping Yuan , Daniel A. Rhodes

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

材料科学 · 物理学 2018-07-04 Igor Neri , Miquel López-Suárez
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