相关论文: Characterization of single shallow silicon-vacancy…
We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics…
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences,…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…
The negatively charged silicon vacancy center (SiV$^-$) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such…
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
We present a quantitative theory for simulating optically detected magnetic resonance (ODMR) measurements of optically-active spin centers using steady-state Lindblad equations. We apply the theory to an experimental ODMR spectrum…
Pressure-induced magnetic phase transition is attracting interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cells. However, detection of the local sample magnetic properties is a great…
Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects…
Nitrogen-vacancy (NV) centers in diamond can be used for nanoscale sensing with atomic resolution and sensitivity; however, it has been observed that their properties degrade as they approach the diamond surface. Here we report that in…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
Over the years, an enormous effort has been made to establish nitrogen vacancy (NV) centers in diamond as easily accessible and precise magnetic field sensors. However, most of their sensing protocols rely on the application of bias…
We study features in the optically detected magnetic resonance (ODMR) signals associated with negatively charged nitrogen-vacancy (NV) centers coupled to other paramagnetic impurities in diamond. Our results are important for understanding…
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin…
The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by…
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic…
As promising quantum sensors, nitrogen-vacancy (NV) centers in diamond have been widely used in frontier studies in condensed matter physics, material sciences, and life sciences. In practical applications, weak laser excitation is…
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…