相关论文: An Atomistic Modelling Framework for Valence Chang…

We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We…

We review the first experiment on dynamic transport in a phase-coherent quantum conductor. In our discussion, we highlight the use of time-dependent transport as a means of gaining insight into charge relaxation on a mesoscopic scale. For…

The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which…

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…

Improving the efficiency and accuracy of energy calculations has been of significant and continued interest in the area of materials informatics, a field that applies machine learning techniques to computational materials data. Here, we…

This paper proposes an electronic circuit simulator-based method to accelerate the power system transient simulation, where the modeling of a generic HVDC (High Voltage Direct Current) system is focused. The electronic circuit simulation…

While the size of functional elements in memristors becomes of the orders of nano-meters or even smaller, the quantum effects in their dynamics can significantly influence their transport properties, consistent with recent experimental…

Quantum reservoir computing (QRC) offers a promising framework for online quantum-enhanced machine learning tailored to temporal tasks, yet practical implementations with native memory capabilities remain limited. Here, we demonstrate an…

We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By…

The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…

Binary matrix-vector multiplication (BMVM) is a key operation in post-quantum cryptography schemes like the Classic McEliece cryptosystem. Conventional computing architectures incur significant energy efficiency loss due to data movement of…

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…

Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of…

Recent studies have shown that the aggregated dynamic flexibility of an ensemble of thermostatic loads can be modeled in the form of a virtual battery. The existing methods for computing the virtual battery parameters require the knowledge…

We study the model of a molecular switch comprised of a molecule with a soft vibrational degree of freedom coupled to metallic leads. In the presence of strong electron-ion interaction, different charge states of the molecule correspond to…

Magnetic Random-Access Memory (MRAM) based p-bit neuromorphic computing devices are garnering increasing interest as a means to compactly and efficiently realize machine learning operations in Restricted Boltzmann Machines (RBMs). When…

Adaptive response to a varying environment is a common feature of biological organisms. Reproducing such features in electronic systems and circuits is of great importance for a variety of applications. Here, we consider memory models…

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response…

A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film…

We propose a new method for simulating electron dynamics in open quantum systems out of equilibrium, using a finite atomistic model. The proposed method is motivated by the intuitive and practical nature of the driven Liouville von-Neumann…