相关论文: An Atomistic Modelling Framework for Valence Chang…

The nonequilibrium dynamics of molecular devices is studied in the framework of a generic model for single-molecule transistors: a resonant level coupled by displacement to a single vibrational mode. In the limit of a broad level and in the…

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…

Transformers, while powerful, suffer from quadratic computational complexity and the ever-growing Key-Value (KV) cache of the attention mechanism. This paper introduces Trellis, a novel Transformer architecture with bounded memory that…

Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…

The Von Neumann bottleneck, a fundamental challenge in conventional computer architecture, arises from the inability to execute fetch and data operations simultaneously due to a shared bus linking processing and memory units. This…

Resistive random access memory (RRAM) is a promising candidate for next-generation nonvolatile memory (NVM) and in-memory computing applications. Compact models are essential for analyzing the circuit and system-level performance of…

As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…

Recent advancements in quantum computing (QC) and machine learning (ML) have garnered significant attention, leading to substantial efforts toward the development of quantum machine learning (QML) algorithms to address a variety of complex…

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…

The virtual admittance-current controller (VA-CC) scheme is widely employed to emulate an equivalent inductance in front of the internal voltage source of grid-forming inverters. However, recent studies have reported harmonic instabilities…

This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…

The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…

Non-Volatile Main Memories (NVMMs) have recently emerged as promising technologies for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy…

Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling perspective, the charge carrier DC current modeling of PCMO…

We describe a paradigm for multiscale modeling that combines the Mori-Zwanzig (MZ) formalism of Statistical Mechanics with the Variational Multiscale (VMS) method. The MZ-VMS approach leverages both VMS scale-separation projectors as well…

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state…

Quantum computers have the potential to simulate chemical systems beyond the capability of classical computers. Recent developments in hybrid quantum-classical approaches enable the determinations of the ground or low energy states of…

Automotive industry is moving toward fully electric and hybrid electric vehicles. Accordingly, energy storage unit is one of the most important blocks in these electric drives. Battery stacks which contain a number of cells are being used…