We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cross-correlations between the switching parameters, while non-linear transformations ensure agreement with both cycle-to-cycle (C2C) and device-to-device (D2D) variability. Benchmarks show that this statistically comprehensive model achieves read/write throughputs exceeding those of even highly simplified and deterministic compact models.
@article{arxiv.2404.06344,
title = {Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design},
author = {Tyler Hennen and Leon Brackmann and Tobias Ziegler and Sebastian Siegel and Stephan Menzel and Rainer Waser and Dirk J. Wouters and Daniel Bedau},
journal= {arXiv preprint arXiv:2404.06344},
year = {2024}
}
Comments
This work has been submitted to the IEEE for possible publication. Code is available at https://zenodo.org/doi/10.5281/zenodo.10942560