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We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…

介观与纳米尺度物理 · 物理学 2026-02-27 François Couëdo , Chiara Mastropasqua , Aurélien Theret , Dominique Mailly , Adrien Michon , Mathieu Taupin

The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomena, including the infrastructure associated with making…

介观与纳米尺度物理 · 物理学 2022-02-15 Albert F. Rigosi

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the…

Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible…

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…

介观与纳米尺度物理 · 物理学 2014-12-09 S. Novikov , N. Lebedeva , K. Pierz , A. Satrapinski

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…

In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…

A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to…

In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss…

介观与纳米尺度物理 · 物理学 2013-10-21 T. J. B. M. Janssen , A. Tzalenchuk , S. Lara-Avila , S. Kubatkin , V. I. Fal'ko

Measurements of fractional multiples of the {\nu}=2 plateau quantized Hall resistance (R_H {\approx} 12906 {\Omega}) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated…

介观与纳米尺度物理 · 物理学 2022-03-15 Dinesh K. Patel , Martina Marzano , Chieh-I Liu , Mattias Kruskopf , Randolph E. Elmquist , Chi-Te Liang , Albert F. Rigosi

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam…

We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise…

介观与纳米尺度物理 · 物理学 2008-12-10 A. J. M. Giesbers , G. Rietveld , E. Houtzager , U. Zeitler , R. Yang , K. S. Novoselov , A. K. Geim , J. C. Maan

We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling…

介观与纳米尺度物理 · 物理学 2020-03-11 Jaesung Park , Wan-Seop Kim , Dong-Hun Chae

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is…

介观与纳米尺度物理 · 物理学 2022-03-15 Chieh-I Liu , Dominick S. Scaletta , Dinesh K. Patel , Mattias Kruskopf , Antonio Levy , Heather M. Hill , Albert F. Rigosi

Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus…

介观与纳米尺度物理 · 物理学 2014-08-25 C. -C. Kalmbach , J. Schurr , F. J. Ahlers , A. Müller , S. Novikov , N. Lebedeva , A. Satrapinski

Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for…

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…

介观与纳米尺度物理 · 物理学 2016-05-25 S. Novikov , N. Lebedeva , J. Hamalainen , I. Iisakka , P. Immonen , A. J. Manninen , A. Satrapinski

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…

介观与纳米尺度物理 · 物理学 2015-04-27 R. Ribeiro-Palau , F. Lafont , J. Brun-Picard , D. Kazazis , A. Michon , F. Cheynis , O. Couturaud , C. Consejo , B. Jouault , W. Poirier , F. Schopfer

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…

介观与纳米尺度物理 · 物理学 2014-01-17 Dong-Keun Ki , Alberto F. Morpurgo

We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto…

介观与纳米尺度物理 · 物理学 2012-04-24 Mirosław Woszczyna , Miriam Friedemann , Martin Götz , Eckart Pesel , Klaus Pierz , Thomas Weimann , Franz J. Ahlers
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