We have performed a metrological characterization of the quantum Hall resistance in a 1 μm wide graphene Hall-bar. The longitudinal resistivity in the center of the ν=±2 quantum Hall plateaus vanishes within the measurement noise of 20 mΩ upto 2 μA. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5μA current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.
@article{arxiv.0810.4064,
title = {Quantum resistance metrology in graphene},
author = {A. J. M. Giesbers and G. Rietveld and E. Houtzager and U. Zeitler and R. Yang and K. S. Novoselov and A. K. Geim and J. C. Maan},
journal= {arXiv preprint arXiv:0810.4064},
year = {2008}
}