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Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

Mesoscale and Nanoscale Physics 2015-06-16 v1

Abstract

Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator resistance bridge with high biasing current Isd = 40 micro ampere. The results showed that at B = 8 T the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

Keywords

Cite

@article{arxiv.1308.0456,
  title  = {Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field},
  author = {A. Satrapinski and S. Novikov and N. Lebedeva},
  journal= {arXiv preprint arXiv:1308.0456},
  year   = {2015}
}