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Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light…

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the…

Graphene can support surface plasmons with higher confinement, lower propagation loss, and substantially more tunable response compared to usual metal-based plasmonic structures. Interestingly, plasmons in graphene can strongly couple with…

光学 · 物理学 2023-08-03 Tianjing Guo , Christos Argyropoulos

Hybrid two-dimensional (2D) materials have attracted increasing interest as platforms for tailoring electronic properties through interfacial design. Very recently, a novel hybrid 2D material termed glaphene, which combines monolayers of 2D…

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

介观与纳米尺度物理 · 物理学 2009-11-13 Y. Q. Wu , P. D. Ye , M. A. Capano , Y. Xuan , Y. Sui , M. Qi , J. A. Cooper

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…

介观与纳米尺度物理 · 物理学 2008-04-10 D. Basu , M. J. Gilbert , L. F. Register , A. H. MacDonald , S. K. Banerjee

Nanostructured electronic devices, such as those based on graphene, are typically grown on top of the insulator SiO2. Their exposure to a flux of small size-selected silver nanoparticles has revealed remarkably selective adhesion: the…

原子与分子团簇 · 物理学 2023-07-14 Patrick J. Edwards , Sean Stuart , James T. Farmer , Ran Shi , Run Long , Oleg V. Prezhdo , Vitaly V. Kresin

Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS${_2}$) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature…

Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an…

The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…

介观与纳米尺度物理 · 物理学 2021-07-22 Mohamed Warda , Khodr Badih

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when…

材料科学 · 物理学 2021-07-14 Y. W. Sun , D. Holec , D. Gehringer , L. Li , O. Fenwick , D. J. Dunstan , C. J. Humphreys

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…

介观与纳米尺度物理 · 物理学 2009-12-14 Yijian Ouyang , Hongjie Dai , Jing Guo

In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…

应用物理 · 物理学 2018-10-31 F. Chianese , A. Candini , M. Affronte , N. Mishra , C. Coletti , A. Cassinese

This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of…

介观与纳米尺度物理 · 物理学 2012-07-31 Priyamvada Jadaun , Bhagawan R. Sahu , Leonard F. Register , Sanjay K. Banerjee

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

介观与纳米尺度物理 · 物理学 2015-06-05 S. Bala Kumar , Gyungseon Seol , Jing Guo

Graphene was recently proposed as a material for heat removal owing to its extremely high thermal conductivity. We simulated heat propagation in silicon-on-insulator circuits with and without graphene lateral heat spreaders. Numerical…

材料科学 · 物理学 2010-02-06 Samia Subrina , Dmitri Kotchetkov , Alexander A. Balandin

Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of…

Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al…

Graphene is the physical realization of many fundamental concepts and phenomena in solid state-physics, but in the long list of graphene remarkable properties, a fundamental block is missing: superconductivity. Making graphene…

超导电性 · 物理学 2011-05-20 Gianni Profeta , Matteo Calandra , Francesco Mauri