相关论文: FinFET and Nanowire SRAM Radiation Hardness Studie…

Heat-Assisted Magnetic Recording (HAMR) has promise to allow for data writing in hard disks of beyond 1 Tb/in2 areal density, by temporarily heating the area of a single datum to its Curie temperature while simultaneously applying a…

Electronic structure properties of nanowires (NW) with diameters of 1.5 nm and 3 nm based on semimetallic $\alpha$-Sn are investigated by employing density functional theory and perturbative $GW$ methods. We explore the dependence of…

Power limiters are essential devices in modern radio frequency (RF) communications systems to protect highly sensitive input channels from large incoming signals. Nowadays-used semiconductor limiters suffer from high electronic noise and…

An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…

Crossbar memory arrays have been touted as the workhorse of in-memory computing (IMC)-based acceleration of Deep Neural Networks (DNNs), but the associated hardware non-idealities limit their efficacy. To address this, cross-layer design…

Two-dimensional (2D) materials possess great potential for flexible devices, ascribing to their outstanding electrical, optical, and mechanical properties. However, their mechanical deformation property and fracture mechanism, which are…

We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different…

Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…

The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

Adversarial examples, designed to trick Artificial Neural Networks (ANNs) into producing wrong outputs, highlight vulnerabilities in these models. Exploring these weaknesses is crucial for developing defenses, and so, we propose a method to…

Deploying deep neural networks (DNNs) in real-world environments poses challenges due to faults that can manifest in physical hardware from radiation, aging, and temperature fluctuations. To address this, previous works have focused on…

Using Time Independent Density Functional Theory (TIDFT) it is shown that the 2nd order optical susceptibilities of narrow (1nm-2nm) Silicon Nanowires (SiNW) are enhanced due to surface termination. The value of $\chi^{(2)}$ is enhanced up…

Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density and non-volatility. However, NVMs also face critical…

Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the…

Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to…

Observation of quantum phenomena in cryogenic, optically cooled mechanical resonators has been recently achieved by a few experiments based on cavity optomechanics. A well-established experimental platform is based on a thin film…

We report the radiation hardness of a p-channel CCD developed for the X-ray CCD camera onboard the XRISM satellite. This CCD has basically the same characteristics as the one used in the previous Hitomi satellite, but newly employs a notch…

Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP)…

We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…