相关论文: FinFET and Nanowire SRAM Radiation Hardness Studie…
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…
Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves…
With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…
Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones,…
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain,…
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently, the solid-state detectors used in the experiments will…
Quantum devices are a promising solution to many research applications, including medical imaging, precision magnetic field measurements, condensed matter physics, and overcoming the limits of classical computing. Among the available…
Materials and devices used in space and advanced energy systems are continuously exposed to high-energy photons and particles, leading to gradual changes in their structural and electronic properties. Gamma-ray exposure is particularly…
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm node" that comes two nodes after the industry "3nm node,"…
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…
Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic…
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has…
In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language…
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the…
In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…
Low-loss optical communication requires light sources at 1.5um wavelengths. Experiments showed without much theoretical guidance that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an…
The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) effects often cause permanent damages…
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional…
Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the…