相关论文: Single-Layer ScI2: A Paradigm for Valley-Related M…

We study spatial symmetry in general ABA-stacked multilayer graphene to illustrate how electronic spectra at the two valleys are related in a magnetic field. We show that the lattice of multilayers with an even number of layers, as well as…

We develop the theory of the spin and valley Hall effects in two-dimensional systems caused by asymmetric -- skew -- scattering of the quasiparticles. The collision integral is derived in the third order in the particle-particle interaction…

We propose a hexagonal optical lattice system with spatial variations in the hopping matrix elements. Just like in the valley Hall effect in strained Graphene, for atoms near the Dirac points the variations in the hopping matrix elements…

To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…

A class of septuple-atomic-layer two-dimensional (2D) materials, MA$_2$Z$_4$, is sought as an alternative to 2D hexagonal transition metal dichalcogenides in the field of valleytronics and spintronics. In these materials, the structural…

We show that the recently discovered double-valley splitting of the low-lying Landau level(s) in the Quantum Hall Effect in graphene can be explained as perturbative orbital interaction of intra- and inter-valley microscopic orbital…

We experimentally investigate the valley-Hall effect for interfacial edge states, highlighting the importance of the modal patterns, between geometrically distinct regions within a structured elastic plate. These experiments, for vibration,…

The photoluminescence (PL) of momentum-indirect $\rm \Gamma- K$ excitons in monolayer WS$_2$ under biaxial strain was recently observed by Blundo et al. [Phys. Rev. Lett. 129, 067402 (2022)], yet its microscopic origin remains elusive. Here…

The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…

The Valley Hall effect provides a popular route to engineer robust waveguides for bosonic excitations such a photons and phonons. The almost complete absence of backscattering in many experiments has its theoretical underpinning in a…

Quantum spin Hall effect was first predicted in graphene. However, the weak spin orbit interaction in graphene meant that the search for quantum spin Hall effect in graphene never fructified. In this work we show how to generate the quantum…

We present a new, single step approach for generating a hexagonal lattice wave-field with a gradient local basis structure. We incorporate this by coherently superposing two (or more) hexagonal lattice wave-fields which differ in their…

Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in…

Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D $\mathrm{MA_2Z_4}$ family materials are of interest because of their emerging topological,…

We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum that lead to unusual effective behavior of the classical Hall effect. Using an anisotropic structure,…

We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…

Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic…

The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K…

The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion…

Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…