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相关论文: Field induced conducting state in Mott insulator

200 篇论文

We show that the interplay of strong Hubbard interaction $U$ and spin-orbit coupling $\lambda$ in systems with $d^4$ electronic configuration leads to several unusual magnetic phases. Most notably, we find that competition between…

强关联电子 · 物理学 2015-02-20 O. Nganba Meetei , William S. Cole , Mohit Randeria , Nandini Trivedi

By employing unbiased numerical methods, we show that pulse irradiation can induce unconventional superconductivity even in the Mott insulator of the Hubbard model. The superconductivity found here in the photoexcited state is due to the…

强关联电子 · 物理学 2019-02-26 Tatsuya Kaneko , Tomonori Shirakawa , Sandro Sorella , Seiji Yunoki

We employ dynamical density-matrix renormalization group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is…

强关联电子 · 物理学 2009-11-07 F. H. L. Essler , F. Gebhard , E. Jeckelmann

We show that a resonant pulsed field can induce a steady superconducting state even in the deep Mott insulating phase of the dimerized Hubbard model. The superconductivity found here in the non-equilibrium steady state is due to the $\eta…

强关联电子 · 物理学 2022-09-07 X. Z. Zhang , Z. Song

We investigate the effect of magnetic fields on a Kondo insulator by using the periodic Anderson model. The analysis by dynamical mean field theory combined with quantum Monte Carlo simulations reveals that the magnetic field drives the…

强关联电子 · 物理学 2009-11-10 Takuma Ohashi , Akihisa Koga , Sei-ichiro Suga , Norio Kawakami

Motivated by experiments on Josephson junction arrays, and cold atoms in an optical lattice in a synthetic magnetic field, we study the "fully frustrated" Bose-Hubbard (FFBH) model with half a magnetic flux quantum per plaquette. We obtain…

量子气体 · 物理学 2015-05-30 Arya Dhar , Maheswar Maji , Tapan Mishra , R. V. Pai , Subroto Mukerjee , Arun Paramekanti

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

Mott insulators can be portrayed as "unsuccessful metals": systems in which a strong Coulomb repulsion prevents charge conduction notwithstanding the metal-like density of conduction electrons. The possibility to unlock such large density…

强关联电子 · 物理学 2016-10-24 G. Mazza , A. Amaricci , M. Capone , M. Fabrizio

Motivated by recent Raman and resonant inelastic X-ray scattering experiments performed for Mott insulators, which suggest formation of excitons in these systems, we present a theory of exciton formation in the upper Hubbard band. The…

强关联电子 · 物理学 2009-11-07 P. Wrobel , R. Eder

In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…

其他凝聚态物理 · 物理学 2010-01-21 Robert Jördens , Niels Strohmaier , Kenneth Günter , Henning Moritz , Tilman Esslinger

The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…

强关联电子 · 物理学 2013-04-09 Axel Euverte , Simone Chiesa , Richard . T. Scalettar , George G. Batrouni

The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…

We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is…

强关联电子 · 物理学 2018-02-14 M. Zhu , J. Peng , T. Zou , K. Prokes , S. D. Mahanti , T. Hong , Z. Q. Mao , G. Q. Liu , X. Ke

We consider effects of artificial magnetic fields on the ground state of the two-dimensional Bose-Hubbard model. Using an asymmetric Bose-Hubbard model, we demonstrate that the frustrating hopping energy localizes bosons and enlarges…

量子气体 · 物理学 2025-07-17 Mohammadamin Jaberi , Fatemeh Heydarinasab

Local spin fluctuations provide the glue for orbital-singlet spin-triplet pairing in the doped Mott insulating regime of multi-orbital Hubbard models. At large Hubbard repulsion $U$, the pairing susceptibility is nevertheless very low,…

强关联电子 · 物理学 2018-04-18 Philipp Werner , Hugo Strand , Shintaro Hoshino , Yuta Murakami , Martin Eckstein

The high harmonic spectrum of the Mott insulating Hubbard model has recently been shown to exhibit plateau structures with cutoff energies determined by $n$th nearest neighbor doublon-holon recombination processes. The spectrum thus allows…

强关联电子 · 物理学 2020-05-26 Markus Lysne , Yuta Murakami , Philipp Werner

We focus our quantitative analysis on the stability of the insulator state in the Hubbard model at a half-filling. Taking into account large-scale fluctuations (with a long relaxation time) of the on-site Coulomb repulsion, we consider the…

强关联电子 · 物理学 2021-08-10 Igor N. Karnaukhov

Interacting many-body systems combining confined and extended dimensions, such as ladders and few layer systems are characterized by enhanced quantum fluctuations, which often result in interesting collective properties. Recently…

强关联电子 · 物理学 2022-06-29 Annabelle Bohrdt , Lukas Homeier , Immanuel Bloch , Eugene Demler , Fabian Grusdt

We show that the effect of disorder on a Mott-Hubbard insulator of interacting electrons produces a quantum phase transition from an antiferromagnetic to a paramagnetic phase governed by a percolation of the singly occupied weakly…

强关联电子 · 物理学 2007-05-23 Dariush Heidarian , Mustansir Barma , Nandini Trivedi

The role of the electron-phonon interaction in the Holstein-Hubbard model is investigated in the metallic phase close to the Mott transition and in the insulating Mott phase. The model is studied by means of a variational slave boson…

强关联电子 · 物理学 2007-05-23 C. A. Perroni , V. Cataudella , G. De Filippis , V. Marigliano Ramaglia