相关论文: Field induced conducting state in Mott insulator

We predict that ferromagnetic resonance in insulating magnetic film with inplane magnetization radiates electric fields polarized along the magnetization with opposite amplitudes at two sides of the magnetic insulator, which can be…

Two-dimensional semiconductor moir\'e materials have emerged as a highly controllable platform to simulate and explore quantum condensed matter. Compared to real solids, electrons in semiconductor moir\'e materials are less strongly…

We show that disorder increases the persistent current of a half-filled one-dimensional Hubbard-Anderson ring at strong interaction. This unexpected effect results from a perturbative expansion starting from the strongly interacting Mott…

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

We demonstrate the ability to visualize real-space dynamics of charge gap and magnon excitations in the Mott phase of the single-band Hubbard model and the remnants of these excitations with hole or electron doping. At short times, the…

An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and…

We develop an exact generalized Bogoliubov transformation for the spin 3/2 Hubbard model with large anti-Hunds rule coupling near half filling. Since our transformation is unitary, we can thereafter employ standard approximate mean field…

For the Mott insulator state of the Fermi-Hubbard model in the strong-coupling limit, we study the interaction between quasi-particles in the form of doublons and holons. Comparing different methods -- the hierarchy of correlations,…

We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency…

Via the hierarchy of correlations, we study doublon-holon pair creation in the Mott state of the Fermi-Hubbard model induced by a time-dependent electric field. Special emphasis is placed on the analogy to electron-positron pair creation…

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

We present a new method, ePT, for extrapolating few known coefficients of a perturbative expansion. Controlled by comparisons with numerically exact quantum Monte Carlo (QMC) results, 10th order strong-coupling perturbation theory (PT) for…

We study the low energy behavior of the one dimensional Hubbard model across the Mott metal-insulator phase transition in an external magnetic field. In particular we calculate elements of the dressed charge matrix at the critical point of…

The photoexcitation of a Mott insulator on a square lattice weakens the intensity of both single- and two-magnon excitations as observed in time-resolved resonant-inelastic X-ray scattering and time-resolved Raman scattering, respectively.…

Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of…

Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is…

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

Moir\'e heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form…

A Hubbard-type model is derived from the microscopic Schr\"odinger equation. We found that additional terms describing direct two-electron transitions must be added to the standard Hubbard Hamiltonian. Such a Hamiltonian generates…

In this work, we present an analytical framework for studying antiferromagnetic (AFM) Mott insulating states in the Hubbard model. We first derive an analytical solution for the single-particle Green's functions in the atomic limit. Within…