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相关论文: Field induced conducting state in Mott insulator

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Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. Doped Mott…

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

We investigate the magnetic-field effects on a two-orbital Hubbard model that describes multiple spin states. Cobalt oxides have been investigated as materials possessing spin-state degrees of freedom due to the interplay between the Hund…

强关联电子 · 物理学 2024-12-11 Ryota Koga , Joji Nasu

Eliashberg theory provides a theoretical framework for understanding the phenomenon of superconductivity when pairing between two electrons is mediated by phonons, and retardation effects are fully accounted for. However, when a direct…

超导电性 · 物理学 2022-05-24 F. Marsiglio

We investigate a spin-$\frac{1}{2}$ fermion chain minimally coupled to a $\mathbb{Z}_2$ gauge field. In the sector of the gauge generator $\hat G_j =-1$, the model reduces to the Hubbard model with repulsive onsite interaction coupled to a…

强关联电子 · 物理学 2023-03-24 Zi-Yong Ge , Franco Nori

We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…

强关联电子 · 物理学 2018-07-11 Francesco Grandi , Adriano Amaricci , Massimo Capone , Michele Fabrizio

Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…

强关联电子 · 物理学 2009-11-13 Takashi Oka , Hideo Aoki

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

Motivated by the recent experimental evidence of commensurate surface charge density waves (CDW) in Pb/Ge(111) and Sn/Ge(111) sqrt{3}-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have…

强关联电子 · 物理学 2009-10-31 Giuseppe Santoro , Sandro Scandolo , Erio Tosatti

In the ionic Hubbard model, the onsite repulsion $U$, which drives a Mott insulator and the ionic potential $V$, which drives a band insulator, compete with each other to open up a window of charge fluctuations when $U \sim V$. We study…

强关联电子 · 物理学 2017-01-04 Abhisek Samanta , Rajdeep Sensarma

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

We show that optical excitation of the Mott insulating phase of the one-dimensional Hubbard model can create a state possessing two of the hallmarks of superconductivity: a nonvanishing charge stiffness and long-ranged pairing correlation.…

强关联电子 · 物理学 2020-07-30 Tatsuya Kaneko , Seiji Yunoki , Andrew J. Millis

We derive the effective charge- and current-density operators for the strong-coupling limit of a single-band Mott insulator in the presence of spin-orbit coupling and show that the spin-orbit contribution to the effective charge density…

强关联电子 · 物理学 2015-06-23 Shan Zhu , You-Quan Li , Cristian D. Batista

The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moir\'e materials opens a new ground for simulating the…

强关联电子 · 物理学 2024-01-09 Yang Zhang , Liang Fu

We investigate the nature of the insulating phases in a bilayer Hubbard model with intralayer coupling $t$ and interlayer coupling $t_{\perp}$ at large interaction strength $U/t$ and half-filling. We consider a dynamical cluster…

强关联电子 · 物理学 2015-06-17 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

Understanding strongly correlated systems driven out of equilibrium is a challenging task necessitating the simultaneous treatment of quantum mechanics,dynamical constraints and strong interactions. A Mott insulator subjected to a uniform…

强关联电子 · 物理学 2019-06-17 Sarath Sankar , Vikram Tripathi

The existence of conserved spin Hall currents is shown in a strongly correlated system without involving spin-orbit coupling. The spin Hall conductivity is determined by intrinsic bulk properties, which remains finite even when the charge…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Xiao-Liang Qi , Zheng-Yu Weng

We study the charge dynamics of the half-filled Hubbard model on the square lattice at zero temperature. We employ a slave-fermion formulation in which the charge degrees of freedom are represented by fermionic holons and doublons and the…

强关联电子 · 物理学 2024-06-26 X. J. Han , Y. Liu , Z. Y. Liu , X. Li , J. Chen , Z. Y. Xie , B. Normand , T. Xiang

We investigate superconductivity emerging in the photodoped Mott insulating Hubbard model using steady-state dynamical mean-field theory implemented on the real-frequency axis. By employing high-order strong-coupling impurity solvers, we…

强关联电子 · 物理学 2026-02-20 Lei Geng , Aaram J. Kim , Philipp Werner

We investigate the role of electron-electron interaction in a two-band Hubbard model based on the Bernevig-Hughes-Zhang Hamiltonian exhibiting the quantum spin Hall (QSH) effect. By means of dynamical mean-field theory, we find that a…

强关联电子 · 物理学 2013-06-06 Jan Carl Budich , Björn Trauzettel , Giorgio Sangiovanni