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相关论文: Field induced conducting state in Mott insulator

200 篇论文

To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding…

强关联电子 · 物理学 2007-05-23 Kenji Yonemitsu

The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective…

强关联电子 · 物理学 2011-12-30 L. Didukh , O. Kramar , Yu. Skorenkyy , Yu. Dovhopyaty

We present a novel pairing mechanism for electrons, mediated by magnons. These paired bound states are termed ``magnetic doublons''. Applying numerically exact techniques (full diagonalization and the density-matrix renormalization group,…

强关联电子 · 物理学 2024-09-02 Roman Rausch , Michael Potthoff , Norio Kawakami

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva

The effect of a magnetic field on Mott-Hubbard systems is investigated by studying the half-filled Hubbard model in the limit of infinite dimensions. A first-order metamagnetic transition between the strongly correlated metal and the Mott…

凝聚态物理 · 物理学 2009-10-22 Laurent Laloux , Antoine Georges , Werner Krauth

We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard…

强关联电子 · 物理学 2013-05-29 Martin Eckstein , Philipp Werner

The physics of the triangular lattice Hubbard model exhibits a rich phenomenology, ranging from a metal-insulator transition, intriguing thermodynamic behavior, and a putative spin liquid phase at intermediate coupling, ultimately becoming…

The effect of a Zeeman magnetic field coupled to the spin of the electrons on the conducting properties of the disordered Hubbard model is studied. Using the Determinant Quantum Monte Carlo method, the temperature- and magnetic-field-…

强关联电子 · 物理学 2009-11-10 P. J. H. Denteneer , R. T. Scalettar

We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

We analyze the possibility of the formation of a magnetic-field-induced insulating state in a two-dimensional granular superconductor with relatively strong intergranular coupling and show that such a state appears in a model with spatial…

无序系统与神经网络 · 物理学 2007-05-23 I. S. Beloborodov , Ya. V. Fominov , A. V. Lopatin , V. M. Vinokur

We study the interplay between electron-electron interaction and a Jahn-Teller phonon coupling in a two-orbital Hubbard model. We demonstrate that the e-ph interaction coexists with the Mott localization driven by the Hubbard repulsion U,…

强关联电子 · 物理学 2025-08-19 A. Scazzola , A. Amaricci , M. Capone

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

The electric and magnetic polarizations as well as the electric and magnetic susceptibilities of the Hubbard pair-cluster embedded in the external fields were studied by the exact method. Based on the grand canonical ensemble for open…

强关联电子 · 物理学 2018-08-28 T. Balcerzak , K. Szałowski

We propose a paring mechanism between holes in the dilute limit of doped frustrated Mott insulators. Hole pairing arises from a hole-hole-magnon three-body bound state. This pairing mechanism has its roots on single-hole kinetic energy…

超导电性 · 物理学 2018-04-25 Shang-Shun Zhang , Wei Zhu , Cristian D. Batista

Some well-established examples of itinerant-electron ferromagnetism in one dimension occur in a Mott-insulating phase. We examine the consequences of doping a ferromagnetic insulator and cou- pling magnons to gapless charge fluctuations.…

强关联电子 · 物理学 2015-04-28 Hudson Pimenta , Luiz N. Oliveira , Rodrigo G. Pereira

Quantum simulations can provide new insights into the physics of strongly correlated electronic systems. A well studied system, but still open in many regards, is the Hubbard-Holstein Hamiltonian, where electronic repulsion is in…

强关联电子 · 物理学 2021-12-08 Utso Bhattacharya , Tobias Graß , Adrian Bachtold , Maciej Lewenstein , Fabio Pistolesi

The Hofstadter-Hubbard model captures the physics of strongly correlated electrons in an applied magnetic field, which is relevant to many recent experiments on Moir\'e materials. Few large-scale, numerically exact simulations exists for…

强关联电子 · 物理学 2022-08-16 Jixun K. Ding , Wen O. Wang , Brian Moritz , Yoni Schattner , Edwin W. Huang , Thomas P. Devereaux

It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is…

介观与纳米尺度物理 · 物理学 2015-06-03 Pavel D. Grigoriev

We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…

强关联电子 · 物理学 2016-05-10 Jason Iaconis , Hiroaki Ishizuka , D. N. Sheng , Leon Balents

We investigate a model for a Mott insulator in presence of a time-periodic modulated interaction and a coupling to a thermal reservoir. The combination of drive and dissipation leads to non-equilibrium steady states with a large number of…

强关联电子 · 物理学 2020-04-08 Francesco Peronaci , Olivier Parcollet , Marco Schiró