相关论文: Strain-Modulated Graphene Heterostructure as a Val…

The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…

The interplay of strain engineering and photon-assisted tunneling of electrons in graphene is considered for giving rise to atypical transport phenomena. The combination of uniaxial strain and a time-periodic potential barrier helps to…

Correlated insulators are frequently observed in magic angle twisted bilayer graphene at even fillings of electrons or holes per moir\'e unit-cell. Whereas theory predicts these insulators to be intervalley coherent excitonic phases, the…

Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation…

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different…

We consider superconducting properties of a two-dimensional Dirac material such as graphene under strain that produces a flat band spectrum in the normal state. We show that in the superconducting state, such a model results in a highly…

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…

Many of the properties of graphene are tied to its lattice structure, allowing for tuning of charge carrier dynamics through mechanical strain. The graphene electro-mechanical coupling yields very large pseudomagnetic fields for small…

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…

We consider graphene deposited on monolayers of such transition-metal dichalcogenides like MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$. Our key objective is to study the impact of relative twist angle between the monolayers on the…

The strain induced pseudo-magnetic field in supported graphene deposited on top of a nanostructured substrate is investigated by using atomistic simulations. Step, elongated trench, one dimensional barrier, spherical bubbles, Gaussian bump…

The theoretical results are presented showing that strain-induced anisotropy of graphene spectrum gives rise to the valley currents under the illumination by normally incident light. The currents of the two graphene valleys are mutually…

Strain engineering enables quantum confinement in pristine graphene without degrading its intrinsic mobility and spin coherence. Here, we extend previously proposed strain-induced charge-qubit architectures by incorporating spin degrees of…

Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in the regions of the Moir\'e pattern with $AA$ stacking. The…

We investigate real- and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the…

Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…

We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight-binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we…

The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to…

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…