相关论文: Demonstration of the DC-Kerr Effect in Silicon-Ric…

The design, fabrication, and characterization of low loss ultra-compact bends in high index (n = 3.1 at {\lambda} = 1550 nm) PECVD silicon rich silicon nitride (SRN) is demonstrated and utilized to realize efficient, small footprint…

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder Interferometers (MZIs) as a function…

We present a study of linearized \c{hi}^((3)) based electro-optic modulation beginning with an analysis of the nonlinear polarizability, and how to linearize a modulator based on the quadratic third order DC-Kerr effect. Then we perform a…

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride (SRN) films. The as-deposited film presents a second-order nonlinear coefficient, or \c{hi}(2), as high as 8pm/V. This value can be…

Phase-sensitive integrated photonic devices are highly susceptible to minor manufacturing deviations, resulting in significant performance inconsistencies. This variability has limited the scalability and widespread adoption of these…

We demonstrate the linear and nonlinear characterization of plasma-enhanced chemical vapor deposited silicon-rich silicon nitride (SRSN) racetrack ring resonator for on-chip application within the telecommunication wavelength range. The SRN…

The unique material property of silicon carbide (SiC) and the recent demonstration of low-loss SiC-on-insulator integrated photonics platform have attracted considerable research interests for chip-scale photonic and quantum applications.…

Nonlinear optical interactions in nanostructures are subjects of both fundamental research and practical applications. The optical Kerr effect, a third-order nonlinear optical phenomenon, induces anisotropic changes in the refractive index…

Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…

Silicon nitride is awell-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of…

Significant changes of the relative permittivity of a silver film have been detected using the surface plasmon resonance (SPR) method when a constant electric field is applied to a MDM (metal-dielectric-metal) nanostructure. The structure…

Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where…

The neutron detection efficiency of Columbia Resin 39 (CR-39) nuclear track detectors was assessed for AmBe, 252Cf, and D-T (14 MeV) neutron source spectra. A boron nitride (BN) coating for CR-39 was developed to enhance the neutron…

Surface enhanced Raman spectroscopy (SERS) was used to probe the surface chemistry of chlorine-terminated silicon nanocrystal (Si-NC) surfaces in an air-free environment. SERS effect was observed from the thin films of Ag$_x$O using 514 nm…

Using Time Independent Density Functional Theory (TIDFT) it is shown that the 2nd order optical susceptibilities of narrow (1nm-2nm) Silicon Nanowires (SiNW) are enhanced due to surface termination. The value of $\chi^{(2)}$ is enhanced up…

The wavelength selective linear absorption in communication C-band is investigated in CMOS-processed PECVD silicon nitride rings. In the overcoupled region, the linear absorption loss lowers the on-resonance transmission of a ring resonator…

In the extreme environments of high-luminosity colliders, traditional planar silicon sensors suffer severe radiation-induced performance degradation and fail to satisfy the stringent demands of high-precision tracking and high-speed timing…

The demand for nonlinear effects within a silicon platform to support photonic circuits requiring phase-only modulation, frequency doubling, and/or difference frequency generation, is becoming increasingly clear. However, the symmetry of…

Cubic boron nitride (c-BN) is an ultrawide-bandgap semiconductor of significant interest for high-frequency and high-power electronics applications owing to its high saturation drift velocity and high electric breakdown field. Beyond…

We report on the realization of silicon nitride membranes with enhanced and electrically tunable reflectivity. A subwavelength one-dimensional grating is directly patterned on a suspended 200 nm-thick, high stress commercial film using…