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Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage,…
4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge…
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron…
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current…
Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high quality epitaxial graphene. On the carbon face (the ($\bar{1}\bar{1}\bar{1}$) or $(000\bar{1}$) face, depending on the polytype), the onset of…
Silicon carbide (SiC) is an essential material for next generation semiconductors and components for nuclear plants. It's applications are strongly dependent on its thermal conductivity, which is highly sensitive to microstructures.…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser…
The buffer carbon layer obtained in the first instance by evaporation of Si from the Si-rich surfaces of silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene. In this work, we explore…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
Silicon carbide (SiC) is an important technological material, but its high-temperature phase diagram has remained unclear due to conflicting experimental results about congruent versus incongruent melting. Here, we employ large-scale…
Diamond is a promising candidate for enhancing the negative-ion surface production in the ion sources for neutral injection in fusion reactors; hence evaluation of its reactivity towards hydrogen plasma is of high importance. High quality…
Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical…
In this master thesis, diamond-like carbon DLC/Cr bilayer systems, with thickness up to 1278 nm were formed on ABS, glass and Si substrates. Substrates surface were prepared by oxygen plasma cleaning process. The chromium thin film, which…
Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…
Diamond and diamond-like carbon (DLC) coatings are widely employed for their exceptional mechanical, thermal and chemical properties, but their industrial application is often limited by weak adhesion to metallic substrates. In this work,…
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si…
An integrated modeling framework for investigating the application of solid boron powder injection for real-time surface conditioning of plasma-facing components in tokamak environments is presented. Utilizing the DIII-D impurity powder…
Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of photonic quantum technologies, nano-mechanical resonators and photonics on-a-chip. For shaping 3D…