相关论文: Reduced etch lag and high aspect ratios by deep re…

In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$\mu$m) platforms, are highly relevant for…

Rapid development in integrated optoelectronic devices and quantum photonic architectures creates a need for optical fiber to chip coupling with low losses. Here we present a fast and generic approach that allows temperature stable…

Thin films of functional inorganic materials, particularly oxides, play a vital role in optoelectronics, enabling applications that range from active optical components to MEMS-based architectures. Achieving high aspect ratio patterning of…

Optical metasurfaces performing analog image processing - such as spatial differentiation and edge detection - hold the potential to reduce processing times and power consumption, while avoiding bulky 4F lens systems. However, current…

We present a tomographic imaging technique, termed Deep Prior Diffraction Tomography (DP-DT), to reconstruct the 3D refractive index (RI) of thick biological samples at high resolution from a sequence of low-resolution images collected…

Electrical Impedance Tomography (EIT) is a non-invasive imaging technique that reconstructs conductivity distributions within a body from boundary measurements. However, EIT reconstruction is hindered by its ill-posed nonlinear inverse…

Many biological materials exhibit a multiscale porosity with small, mostly nanoscale pores as well as large, macroscopic capillaries to simultaneously achieve optimized mass transport capabilities and lightweight structures with large inner…

We report on the fabrication of micro-axicons made of glass by laser-assisted wet etching (LAE) and laser polishing. The employed technique, relying on an efficient direct-writing process by femtosecond laser, allows revealing high fidelity…

MRI is increasingly desired to function near electronic devices that emit potentially dynamic electromagnetic interference (EMI). To accommodate for this, we propose the STRIDE method, which improves on previous external-sensor-based EMI…

Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…

Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by…

Purpose: We developed a dynamic B0 shimming approach using a 46-channel AC/DC shim array to correct phase errors caused by eddy currents from diffusion-encoding gradients in diffusion-prepared MRI, enabling high b-value imaging without the…

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films,…

The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…

Silicon detectors typically require an insensitive area around their periphery to accommodate guard rings, which help maintain the electric field uniformity around edge pixels and isolate the high leakage current from the physical edges of…

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier…

The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require…

Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric 3D structures enable high trap depth, but…

A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…

To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…