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We explore layered strongly correlated materials as a platform to identify and control unconventional heat transfer phenomena. We demonstrate that these systems can be tailored to sustain a wide spectrum of heat transport regimes, ranging…

强关联电子 · 物理学 2021-11-29 Giacomo Mazza , Marco Gandolfi , Massimo Capone , Francesco Banfi , Claudio Giannetti

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…

A comprehensive rational thermal material design paradigm requires the ability to reduce and enhance the thermal conductivities of nanomaterials. In contrast to the existing ability to reduce the thermal conductivity, methods that allow to…

介观与纳米尺度物理 · 物理学 2017-10-09 Abhinav Malhotra , Kartik Kothari , Martin Maldovan

2H phase (trigonal prismatic D3h) of layered two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a lot of interests due to the superior electronic and optoelectronic properties. However, flexible electronic devices…

计算物理 · 物理学 2019-06-04 Yi Wang , Zhibin Gao , Jun Zhou

This article introduces a thin-film thermocouple temperature sensor with symmetrical electrode structure. It uses PI film as a flexible substrate. Cu film and CuNi film made by MEMS manufacturing process as positive and negative electrodes.…

材料科学 · 物理学 2021-11-12 Yulong Bao , Bin Xu , Huang Wang , Dandan Yuan , Xiaoxiao Yan , Haoxin Shu , Gang Tang

We propose a phase-controlled heat-flux quantum valve based on the proximity effect driven by a superconducting quantum interference proximity transistor (SQUIPT). Its operation relies on the phase-dependent quasiparticle density of states…

介观与纳米尺度物理 · 物理学 2014-09-01 E. Strambini , F. S. Bergeret , F. Giazotto

GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…

材料科学 · 物理学 2014-02-25 Lianfeng Zhao , Zhen Tan , Jing Wang , Jun Xu

In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…

介观与纳米尺度物理 · 物理学 2007-05-23 K. Lai , W. Pan , D. C. Tsui , S. Lyon , M. Muhlberger , F. Schaffler

We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and…

Extended from its electromagnetic counterpart, transformation thermodynamics applied to thermal conduction equations can map a virtual geometry into a physical thermal medium, realizing the manipulation of heat flux with almost arbitrarily…

经典物理 · 物理学 2015-06-19 Yichao Liu , Wei Jiang , Sailing He , Yungui Ma

In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition is characterized. We found that the TOC of the film increases as its…

光学 · 物理学 2022-09-28 Li-Yang Sunny Chang , Steve Pappert , Paul K. L. Yu

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…

介观与纳米尺度物理 · 物理学 2026-03-17 Yungyeong Park , Yosep Park , Hyeonseok Choi , Subeen Lim , Dongwook Kim , Yeonghun Lee

Superconducting FeSe0.8Te0.2 thin films on SrTiO3, LaAlO3 and CaF2 substrates were electrochemically etched in an ionic liquid DEME-TFSI electrolyte with a gate bias of 5 V. Superconductivity at 38 K was commonly observed on all substrates…

Plasmonic excitations behave fundamentally different in layered materials in comparison to bulk systems. They form gapless modes, which in turn couple at low energies to the electrons. Thereby they can strongly influence superconducting…

超导电性 · 物理学 2018-03-14 M. Rösner , R. E. Groenewald , G. Schönhoff , J. Berges , S. Haas , T. O. Wehling

At low temperatures, < 200 mK, the thermal flux through low-dimensional amorphous dielectric bars, < 2 $\mu$m wide and 200 nm thick, is transported by a small number of low-order elastic modes. For long bars, L > 400 $\mu$m, it is known…

介观与纳米尺度物理 · 物理学 2017-09-13 Stafford Withington , Emily Williams , David J. Goldie , Christopher N. Thomas , Max Schneiderman

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

介观与纳米尺度物理 · 物理学 2015-08-04 Binhui Hu , M. M. Yazdanpanah , B. E. Kane , E. H. Hwang , S. Das Sarma

By coupling two nonlinear one dimensional lattices, we demonstrate a thermal diode model that works in a wide range of system parameters. We provide numerical and analytical evidence for the underlying mechanism which allows heat flux in…

无序系统与神经网络 · 物理学 2009-11-10 Baowen Li , Lei Wang , Giulio Casati

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…

介观与纳米尺度物理 · 物理学 2017-02-07 Zhe Luo , Jifa Tian , Mithun Srinivasan , Yong P. Chen , Xianfan Xu

Using Terahertz Time-Domain Spectroscopy, we study the temperature-dependent complex optical conductivity of the topological insulator, Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ single-crystal from 5 K to 150 K in the terahertz regime (0.4…

介观与纳米尺度物理 · 物理学 2012-06-07 Chi Sin Tang , Bin Xia , Xingquan Zhou , Jian-Xin Zhu , Lan Wang , Elbert E. M. Chia

Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, minimizing the energy dissipation and power consumption of cryogenic electronic components is pivotal for large-scale devices.…