相关论文: Capacitor Type Thin-Film Heat Flow Switching Devic…

Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated…

We investigate the possibility to obtain a thermal diode with functionally graded Si-Ge alloys. A wire with variable section is considered. After the introduction of a formula giving the thermal conductivity of the wire as a function of the…

This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates.…

While Moore's Law has approached its physical limits lately, the high integration and miniaturisation of electronics have also brought another thermal failure obstacle. Previous studies on single-phase flow demanded significant pump power…

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…

Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors. In particular, we show how to…

Low-temperature dissipation due to vortex motion in strongly anisotropic type-II superconductors with a moderate disorder ($\Delta^2/E_F \ll \hbar/\tau \ll \Delta$) is shown to be determined by the Zener-type transitions between the…

Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported.…

A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it…

How to macroscopically control the flow of heat at will is up to now a challenge, which, however, is very important for human life since heat flow is a ubiquitous phenomenon in nature. Inspired by intelligent electronic components or…

MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…

We present a groundbreaking demonstration of thermal modulation in a field-effect-controllable semiconductor-superconductor hybrid structure, wherein the heating mechanism is exclusively radiative. The architecture comprises two reservoirs…

Laser irradiation of materials is most commonly modeled with the two-temperature model (TTM), or its combination with molecular dynamics, TTM-MD. For such modeling, the electronic transport coefficients are required. Here, we calculate the…

Electrical control of oxygen off-stoichiometry of transition-metal oxides at room temperature is a desired strategy to simultaneously switch the electrical conductance and magnetism of the device. Although the use of the electrochemical…

Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue…

We study the heat transfer between weakly coupled systems with flat interface. We present simple analytical results which can be used to estimate the heat transfer coefficient. As applications we consider the heat transfer across…

Using direct atomic simulations, the vibration scattering time scales are characterized, and then the nature and the quantitative weight of thermal excitations are investigated in an example system Li2S from its amorphous solid state to its…