相关论文: Stimulated emission at 1.54 $\mu$m from Erbium/Oxy…
We study a mechanism to induce superconductivity in atomically thin semiconductors where excitons mediate an effective attraction between electrons. Our model includes interaction effects beyond the paradigm of phonon-mediated…
Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630…
We describe a high-power, frequency-tunable, external cavity diode laser (ECDL) system near 626 nm useful for laser cooling of trapped $^9$Be$^+$ ions. A commercial single-mode laser diode with rated power output of 170 mW at 635 nm is…
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously…
In this letter we report on the generation of cold electron beams using a Cs3Sb photocathode grown by co-deposition of Sb and Cs. By cooling the photocathode to 90 K we demonstrate a significant reduction in the mean transverse energy…
Reaching lasing in electrically pumped microdevices based on solution-processed semiconductors poses a major scientific and technological challenge. Halide perovskites offer a promising platform for electrical injection, since their…
The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse…
We report on strongly enhanced electron multiplication in thin silicon membranes. The device is configured as a transmission-type membrane for electron multiplication. A sub-threshold electric field applied on the emission side of the…
A Light Emitting Diode (LED) based on a two dimensional (2D) Hybrid Organic-Inorganic Semiconductor (HOIS) functioning at room temperature is demonstrated. LED is fabricated by depositing a layer of (4-fluorophenethylamine-H)2PbI4 on an ITO…
Photonic integrated circuits based on erbium doped thin film lithium niobate on insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband…
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…
Eu(II) complexes are attractive emitters for deep-blue organic light-emitting diodes (OLEDs) due to their narrow, parity-allowed 4f-5d emission; however, their implementation in vacuum-processed OLEDs has remained limited. Here, we…
Silicene has been synthesized recently, with experimental evidence showing possible superconductivity in the doped case. The noncoplanar low-buckled structure of this material inspires us to study the pairing symmetry of the doped system…
Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external…
We report on the generation of 500 mW of spectrally pure laser light at the 460.86 nm transition used for laser cooling of strontium atoms. To this end we inject a high power single mode laser diode with light from a stabilized extended…
We propose an energy transfer model with a cubic atomic population dependence to accurately model the behavior of various reported high-power erbium-doped fluoride fiber lasers operating near 2.8 microns. We first show that the previously…
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…
We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not…