相关论文: Stimulated emission at 1.54 $\mu$m from Erbium/Oxy…
Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be…
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped…
We demonstrate an electrically driven compact hybrid lithium niobate microring laser by butt coupling a commercial 980-nm pump laser diode chip with a high quality Er3+-doped lithium niobate microring chip. Single mode lasing emission at…
Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband…
Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the…
Erbium-based materials have long been recognized for their important telecom-band applications, yet their widespread adoption in integrated optoelectronics has been hindered by two fundamental limitations: the difficulty in achieving high…
We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power…
As a high-order quantum transition, two-photon emission has an extremely low occurrence rate compared to one-photon emission, thus having been considered a forbidden process. Here, we propose a scheme that allows ultrafast two-photon…
We propose a sub-Doppler laser cooling mechanism that takes advantage of the unique spectral features and extreme dispersion generated by the phenomenon of electromagnetically induced transparency (EIT). EIT is a destructive quantum…
Erbium doped materials are of great interest in optical telecommunications due to the Er3+ intra-4f emission at 1.54 ?m. Erbium doped fibre amplifiers (EDFA) were developed in silica glass because of the low losses at this wavelength and…
We present a proposal for achieving light-induced superconductivity using exciton polaritons - hybrid light-matter particles of excitons (bound electron-hole pairs) and microcavity photons. In contrast to previous theories of…
We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the…
Rare-earth-ion-doped crystals has emerged as a promising platform for quantum technologies, owing to their narrow telecom-band optical emission, long spin memory, and compatibility with silicon integrated photonic architectures. However,…
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer…
We present a high-resolution photoluminescence study of Er-doped SiO2 sensitized with Si nanocrystals (Si NCs). Emission bands originating from recombination of excitons confined in Si NCs and of internal transitions within the 4f-electron…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
We exploit the recent proposals for the light-induced superconductivity mediated by a Bose-Einstein condensate of exciton-polaritons to design a superconducting fiber that would enable long-distance transport of a supercurrent at elevated…
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…
The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a…
Dy$^{3+}$-doped silica glass whispering gallery mode microspheres are fabricated by fiber fusion splicing. They present an almost ideal spherical morphology with a radius ranging from 60 to 67 ${\mu}$m as determined by confocal laser…