相关论文: Stimulated emission at 1.54 $\mu$m from Erbium/Oxy…
Silicon has been long known as a poor light emitter due to its indirect band gap and strong phonon-assisted decay of the excited states. Nevertheless, we have revealed efficient quasi-monochromatic photoluminescence at 368 nm from bulk…
Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but…
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable…
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties…
Colloidal nanocrystals are unique optical gain materials due to their high intrinsic absorption, excellent quantum yield, and tunable emission. However, integration of colloidal nanocrystal solutions into photonic systems for lasing…
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer…
For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical…
Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent (EL) devices ideal for large-area display and lighting applications. Exploiting emission layers with high…
Fiber-based multi-wavelength lasers have a variety of important applications in telecommunication and meteorology. We experimentally study a fiber loop laser with an integrated Erbium doped fiber (EDF). The output optical spectrum is…
We present the results of spectroscopic measurements in the extreme ultraviolet (EUV) regime (7-17 nm) of molten tin microdroplets illuminated by a high-intensity 3-J, 60-ns Nd:YAG laser pulse. The strong 13.5 nm emission from this…
We report the generation of MeV temperature electrons using sub-terawatt laser systems with a liquid methanol jet as a target. Remarkably, even at laser intensities of 1016W/cm2, liquid cylindrical (2D) 15 micron methanol jets produce…
We present laser results obtained from a Dy$^{3+}$-Tb$^{3+}$ co-doped LiLuF$_{4}$ crystal, pumped by a blue emitting InGaN laser diode, aiming for the generation of a compact 578 nm source. We exploit the yellow Dy$^{3+}$ transition…
Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active…
The fabrication of whispering gallery lasers (WGL) is used to experimentally evaluate the evaporation rate (mol/$\mu$m) and ratio (mol/mol) of erbium and silica lost from a doped fiber during heating. Fixed lengths of doped silica fiber are…
We have studied the 1.5 $\mu$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam…
Polarisation doping of Al$_x$Ga$_{1-x}$N, through grading of $x$, has realised major improvements in $p$-type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared to conventional impurity doping. However, the exact balance…
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the…
Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope…