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相关论文: Electron, hole and exciton effective g-factors in …

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We provide a systematic quantitative description of spin polarization in armchair and zigzag graphene nanoribbons in a perpendicular magnetic field. We first address spinless electrons within the Hartree approximation studying the evolution…

介观与纳米尺度物理 · 物理学 2015-06-05 S. Ihnatsenka , I. V. Zozoulenko

We propose correlated yet extremely simple single-parameter-dependent wave-functions with a Slater-type correlation factor, to describe excitons in 0D, quasi-1D and quasi-2D semiconductor quantum dots. We provide closed-form formulas for…

介观与纳米尺度物理 · 物理学 2017-05-10 Josep Planelles

The combined effect of electron-electron interactions and spin-orbit scattering in metal nanoparticles can be studied by measuring splitting of electron levels in magnetic field ($g$ factors) in tunneling spectroscopy experiments. Using…

介观与纳米尺度物理 · 物理学 2007-05-23 Denis A. Gorokhov , Piet W. Brouwer

Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…

介观与纳米尺度物理 · 物理学 2011-06-15 H. Tong , M. W. Wu

Atomistically detailed computational studies of nanocrystals, such as those derived from the promising lead-halide perovskites, are challenging due to the large number of atoms and lack of symmetries to exploit. Here, focusing on…

材料科学 · 物理学 2022-10-05 Giulia Biffi , Yeongsu Cho , Roman Krahne , Timothy C. Berkelbach

Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons…

介观与纳米尺度物理 · 物理学 2009-11-10 Pablo Jarillo-Herrero , Sami Sapmaz , Cees Dekker , Leo P. Kouwenhoven , Herre S. J. van der Zant

Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical…

介观与纳米尺度物理 · 物理学 2008-01-16 D. Csontos , U. Zuelicke

The region surrounding the excitonic insulator phase is a three-component plasma composed of electrons, holes, and excitons. Due to the extended nature of the excitons, their presence influences the surrounding electrons and holes. We…

强关联电子 · 物理学 2015-06-22 B Zenker , D Ihle , F X Bronold , H Fehske

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…

We measure the photoluminescence (PL) lifetime, $\tau$, of excitons in colloidal PbSe nanocrystals (NCs) at low temperatures to 270~mK and in high magnetic fields to 15~T. For all NCs (1.3-2.3~nm radii), $\tau$ increases sharply below 10~K…

介观与纳米尺度物理 · 物理学 2010-08-24 R. D. Schaller , S. A. Crooker , D. A. Bussian , J. M. Pietryga , J. Joo , V. I. Klimov

Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…

介观与纳米尺度物理 · 物理学 2022-03-03 Christoph Adelsberger , Mónica Benito , Stefano Bosco , Jelena Klinovaja , Daniel Loss

We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an…

介观与纳米尺度物理 · 物理学 2020-05-20 Hiroshi Irie , Takafumi Akiho , Koji Muraki

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron…

介观与纳米尺度物理 · 物理学 2014-12-22 G. Allison , T. Fujita , K. Morimoto , S. Teraoka , M. Larsson , H. Kiyama , A. Oiwa , S. Haffouz , D. G. Austing , A. Ludwig , A. D. Wieck , S. Tarucha

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron…

强关联电子 · 物理学 2007-05-23 V. S. Khrapai , A. A. Shashkin , V. T. Dolgopolov

Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange…

介观与纳米尺度物理 · 物理学 2015-05-14 Eugene Kadantsev , Pawel Hawrylak

Effective mass equations are the simplest models of carrier states in a semiconductor structures that reduce the complexity of a solid-state system to Schr\"odinger- or Pauli-like equations resempling those well known from quantum mechanics…

介观与纳米尺度物理 · 物理学 2018-03-30 Adam Mielnik-Pyszczorski , Krzysztof Gawarecki , Paweł Machnikowski

Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure…

The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices.…

介观与纳米尺度物理 · 物理学 2020-10-28 J. Förste , N. V. Tepliakov , S. Yu. Kruchinin , J. Lindlau , V. Funk , M. Förg , K. Watanabe , T. Taniguchi , A. S. Baimuratov , A. Högele

As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimensional mapping of small variations of the electron g-factor…

We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm…