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相关论文: Light-Induced Valleytronics in Pristine Graphene

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Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…

介观与纳米尺度物理 · 物理学 2017-11-08 Chunlei Qu , Chuanwei Zhang , Fan Zhang

As hosts for tightly-bound electron-hole pairs carrying quantized angular momentum, atomically-thin semiconductors of transition metal dichalcogenides provide an appealing platform for optically addressing the valley degree of freedom. In…

介观与纳米尺度物理 · 物理学 2018-10-24 Shao-Yu Chen , Thomas Goldstein , Takashi Taniguchi , Kenji Watanabe , Jun Yan

Spatial heterogeneity and phase competition are hallmarks of strongly-correlated materials, promising tunable functionality on the nanoscale. Light-induced switching of a correlated insulator to a metallic state is well established.…

Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics…

材料科学 · 物理学 2013-03-12 Xiao Li , Ting Cao , Qian Niu , Junren Shi , Ji Feng

Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It…

介观与纳米尺度物理 · 物理学 2008-08-25 Di Wu , Weiqiang Chen , Fu-Chun Zhang

If we stack up two layers of graphene while changing their respective orientation by some twisting angle, we end up with a system that has striking differences when compared to single-layer graphene. For a very specific value of this twist…

介观与纳米尺度物理 · 物理学 2024-09-18 Eduardo B. Molinero , Anushree Datta , María J. Calderón , Elena Bascones , Rui E. F. Silva

Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…

材料科学 · 物理学 2020-03-11 Pei Zhaos , Yandong Ma , Hao Wang , Baibiao Huang , Liangzhi Kou , Ying Dai

The extreme mechanical resilience of graphene and the peculiar coupling it hosts between lattice and electronic degrees of freedom have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the…

介观与纳米尺度物理 · 物理学 2017-08-16 Gareth W. Jones , D. A. Bahamon , A. H. Castro Neto , Vitor M. Pereira

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means…

介观与纳米尺度物理 · 物理学 2014-06-05 J. -H. Chen , G. Autès , N. Alem , F. Gargiulo , A. Gautam , M. Linck , C. Kisielowski , O. V. Yazyev , S. G. Louie , A. Zettl

Velleytronics as a new electronic conception is an emerging exciting research field with wide potential applications, which is attracting great research interests for their extraordinary properties. The localized electronic spins by optical…

量子物理 · 物理学 2017-04-06 Yu-Ran Zhang , Jing Wang , Chuanrui Zhu , Heng Fan , Baoli Liu

Circularly polarized extreme ultraviolet (XUV) radiation is highly interesting for investigation of chirality-sensitive light-matter interactions. Recent breakthroughs have enabled generation of such light sources via high harmonic…

光学 · 物理学 2019-02-19 Zi-Yu Chen , Rui Qin

We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic…

介观与纳米尺度物理 · 物理学 2010-08-06 T. Fujita , M. B. A. Jalil , S. G. Tan

Inversion symmetry breaking allows contrasted circular dichroism in different k-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band-edges occur at…

介观与纳米尺度物理 · 物理学 2008-06-05 Wang Yao , Di Xiao , Qian Niu

Information processing currently reaches speeds as high as 800 GHz. However, the underlying transistor technology is quickly approaching its fundamental limits and further progress requires a disruptive approach. One such path is to…

We study the electron scattering produced by local out-of-plane strain deformations in the form of Gaussian bumps in graphene. Of special interest is to take into account the scalar field associated with the redistribution of charge due to…

介观与纳米尺度物理 · 物理学 2018-10-30 Ramon Carrillo-Bastos , Marysol Ochoa , Saúl A. Zavala , Francisco Mireles

Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the…

材料科学 · 物理学 2021-02-09 Abdullah Rasmita , Chongyun Jiang , Hui Ma , Zhurun Ji , Ritesh Agarwal , Wei-bo Gao

Optical properties of semiconducting monolayer transition metal dichalcogenides have received a lot of attention in recent years, following the discovery of the valley selective optical population of either $K_{+}$ or $ K_{-}$ valleys at…

其他凝聚态物理 · 物理学 2022-05-17 Andrey Geondzhian , Angel Rubio , Massimo Altarelli

Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of…

Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…

材料科学 · 物理学 2023-02-07 San-Dong Guo , Yu-Ling Tao , Guang-Zhao Wang , Shaobo Chen , Yee Sin Ang

It is shown that one can explore the optical conductivity of graphene, together with the ability of controlling its electronic density by an applied gate voltage, in order to achieve resonant coupling between an external electromagnetic…

介观与纳米尺度物理 · 物理学 2015-05-19 Yu. V. Bludov , M. I. Vasilevskiy , N. M. R. Peres