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Both spin textures and multiple valleys in the momentum space have attracted great attentions due to their versatile applications in spintronics and valleytronics. It is highly desirable to realize multiple types of spin textures in a…

材料科学 · 物理学 2025-12-30 Li Liang , Zhichao Zhou , Jie Zhang , Xiao Li

A class of septuple-atomic-layer two-dimensional (2D) materials, MA$_2$Z$_4$, is sought as an alternative to 2D hexagonal transition metal dichalcogenides in the field of valleytronics and spintronics. In these materials, the structural…

材料科学 · 物理学 2023-06-27 Sajjan Sheoran , Ankita Phutela , Ruman Moullik , Saswata Bhattacharya

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…

介观与纳米尺度物理 · 物理学 2016-05-25 T. Smoleński , M. Goryca , M. Koperski , C. Faugeras , T. Kazimierczuk , K. Nogajewski , P. Kossacki , M. Potemski

The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…

材料科学 · 物理学 2024-03-05 Wei Xun , Chao Wu , Hanbo Sun , Weixi Zhang , Yin-Zhong Wu , Ping Li

We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2…

光学 · 物理学 2014-05-08 Qinsheng Wang , Shaofeng Ge , Xiao Li , Jun Qiu , Yanxin Ji , Ji Feng , Dong Sun

Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the…

The valley pseudospin in monolayer transition metal dichalcogenides (TMDs) has been proposed as a new way to manipulate information in various optoelectronic devices. This relies on a large valley polarization that remains stable over long…

介观与纳米尺度物理 · 物理学 2017-12-22 Fahad Mahmood , Zhanybek Alpichshev , Yi-Hsien Lee , Jing Kong , Nuh Gedik

Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange…

介观与纳米尺度物理 · 物理学 2023-01-30 Kai-Tong Wang , Hui Wang , Fuming Xu , Yunjin Yu , Yadong Wei

Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr$_2$COOH MXene is a promising…

材料科学 · 物理学 2023-11-03 Ping Li , Chao Wu , Cheng Peng , Mutian Yang , Wei Xun

For applications exploiting the valley pseudospin degree of freedom in transition metal dichalcogenide monolayers, efficient preparation of electrons or holes in a single valley is essential. Here, we show that a magnetic field of 7 Tesla…

介观与纳米尺度物理 · 物理学 2017-06-14 Patrick Back , Meinrad Sidler , Ovidiu Cotlet , Ajit Srivastava , Naotomo Takemura , Martin Kroner , Atac Imamoglu

A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…

介观与纳米尺度物理 · 物理学 2023-06-09 Zhou Li , J. P. Carbotte

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in…

介观与纳米尺度物理 · 物理学 2016-01-13 Pasqual Rivera , Kyle L. Seyler , Hongyi Yu , John R. Schaibley , Jiaqiang Yan , David G. Mandrus , Wang Yao , Xiaodong Xu

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional…

The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means.…

材料科学 · 物理学 2023-07-10 Huiqian Wang , Li Liang , Xiaohui Wang , Xiaoyu Wang , Xiao Li

Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry…

The recently discovered two-dimensional (2D) layered semiconductor MoSi2N4 has aroused great interest due to its unique 2D material characteristics. In this Letter, we found that differences in the structural details for MoSi2N4 may lead to…

介观与纳米尺度物理 · 物理学 2021-05-12 Lei Kang , Zheshuai Lin

Recently, two-dimensional monolayer MoSi2N4 with hexagonal structure was successfully synthesized in experiment (Hong et al 2020 Science 369, 670). The fabricated monolayer MoSi2N4 is predicted to have excellent mechanical properties.…

介观与纳米尺度物理 · 物理学 2021-04-14 Qingfang Li , Wanxin Zhou , Xiangang Wan , Jian Zhou

Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…

材料科学 · 物理学 2017-08-16 Tiantian Zhang , Sijie Zhang , Gang Xu , Nanlin Wang , Zhong Fang

Excitons in monolayer transition metal dichalcogenides (TMDs) are formed at K and K' points at the boundary of the Brillouin zone. They acquire a valley degree of freedom, which may be used as a complementary platform for information…

Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS2 is a non-centrosymmetric…

材料科学 · 物理学 2015-06-11 Kin Fai Mak , Keliang He , Changgu Lee , Gwan Hyoung Lee , James Hone , Tony F. Heinz , Jie Shan